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The (3 × 3) reconstruction and its evolution during the nitridation of GaAs(001)

Lu, J., Westwood, David, Haworth, L., Hill, P. and Macdonald, John Emyr 1999. The (3 × 3) reconstruction and its evolution during the nitridation of GaAs(001). Thin Solid Films 343-44 , pp. 567-570. 10.1016/S0040-6090(98)01716-7

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Nitridation of GaAs(001) was performed using a radio frequency nitrogen plasma source in a molecular beam epitaxy chamber. The nitrogen-induced GaAs(001) (3 × 3) reconstruction was investigated by reflection high energy electron diffraction (RHEED) and X-ray photoemission spectroscopy (XPS). The temperature dependence of the (3 × 3) reconstruction as well as its evolution during further nitridation was observed by RHEED; we found that the (3 × 3) reconstruction could be obtained in the temperature range 400–580 °C by a very low dose of atomic nitrogen deposition. The nitrogen coverage in the (3 × 3) reconstruction is determined to be in the range 0.2–0.4 ML using XPS. We also discuss the atomic model of the (3 × 3) reconstruction and the energetics of its formation and stability.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: Zincblende GaN; Nitridation; GaAs(001); Reflection high energy electron diffraction; X-ray photoemission spectroscopy
Publisher: Elsevier
ISSN: 0040-6090
Last Modified: 04 Jun 2017 04:52

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