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Formation of an Sb-N compound during nitridation of InSb (001) substrates using atomic nitrogen

Haworth, L., Lu, J., Hill, P., Westwood, David, Macdonald, John Emyr, Hartmann, N., Schneider, A. and Zahn, D. T. 1998. Formation of an Sb-N compound during nitridation of InSb (001) substrates using atomic nitrogen. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16 (4) , pp. 2254-2261. 10.1116/1.590158

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The effect of atomic nitrogen, generated by a radio frequency plasma source, on clean InSb(001) at 275 °C has been studied using x-ray photoelectron spectroscopy (XPS) and resonant Raman scattering (RRS). Chemically shifted XPS features of the Sb 3d region revealed the formation of a reacted Sb species. This reacted Sb was unambiguously identified as mainly Sb–N by comparison with results from as deposited and nitrided, thick elemental Sb layers on InSb. The Sb 3d feature due to this Sb–N species was found to have a chemical shift of 1.65±0.10 eV to higher binding energy compared with the InSb peak, while for the elemental Sb the shift was only 0.45±0.10 eV in the same direction. Although not obvious from the XPS data the RRS spectra of a much longer nitridation at 275 °C showed the presence of crystalline elemental Sb. Annealing studies of elemental Sb and nitrided Sb layers showed the Sb–N species to be significantly less volatile than elemental

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: indium compounds; III-V semiconductors; nitridation; X-ray photoelectron spectra; Raman spectra; annealing; chemical shift
Publisher: American Vacuum Society
ISSN: 0734-211X
Last Modified: 04 Jun 2017 04:52

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