A method for determining band offsets in semiconductor superlattices and interfaces

Bass, J. M., Oloumi, M. and Matthai, Clarence Cherian 1989. A method for determining band offsets in semiconductor superlattices and interfaces. Journal of Physics: Condensed Matter 1 (51) , pp. 10625-10628. 10.1088/0953-8984/1/51/032

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Abstract

The long-standing problem of determining band offsets at semiconductor interfaces is readdressed and a new method for obtaining these values is proposed. Ab initio self-consistent pseudopotential calculations have been done on the Si/Ge and InAs/GaAs systems and the band offsets in specific cases determined. The problem of band offsets in superlattices is also investigated with particular reference to the superlattice period length and orientation. The existence of these band offsets is found to depend strongly on the localisation of some of the valence or conduction bands in either of the constituents.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IOP Publishing
ISSN:	09538984
Last Modified:	04 Jun 2017 06:50
URI:	https://orca.cardiff.ac.uk/id/eprint/65180

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