Browse by Current Cardiff authors

Matthai, Clarence 2018. Quantifying the effect of point and line defect densities on the melting temperature in the transition metals. Many-body Approaches at Different Scales, Springer, pp. 125-131.

Matthai, C. C. and March, N. H. 2017. The temperature dependence of the surface tension of monatomic liquids and the boiling transition. Physics and Chemistry of Liquids 55 (2) 10.1080/00319104.2016.1195039

Salih, Rangeen and Matthai, Clarence C. 2017. Coarse grained molecular dynamic simulations of the interaction a carbon nanotube with a bilayer membrane. MRS Advances 2 (48) , pp. 2603-2608. 10.1557/adv.2017.304

Salih, Rangeen and Matthai, C. C. 2017. Computer simulations of the diffusion of Na+ and Cl− ions across POPC lipid bilayer membranes. Journal of Chemical Physics 146 (10) , 105101. 10.1063/1.4977703

Matthai, Clarence C. and Rainbow, Jessica 2017. Molecular dynamics studies of the melting of copper with vacancies and dislocations at high pressures. MRS Advances 2 (48) , pp. 2597-2602. 10.1557/adv.2017.353

Matthai, Clarence and March, N. H. 2016. Electron correlation effects reflected in thermodynamic properties of light actinides. Physics and Chemistry of Liquids 54 (5) , pp. 680-682. 10.1080/00319104.2016.1164947

Matthai, C. C., Lamoen, D. and March, N. H. 2016. Melting temperatures and possible precursor plastic phases of CCl4 and GeI4 as a function of pressure. Physics and Chemistry of Liquids 54 (1) , pp. 130-134. 10.1080/00319104.2015.1068666

Jones, G., Elias, Watheq, Elliott, M. ORCID: https://orcid.org/0000-0002-9254-9898 and Matthai, C. C. 2014. A computational study of the factors affecting the electrical conductance of long chain n-porphyrin di-thiols. Physica B: Condensed Matter 446 , pp. 71-79. 10.1016/j.physb.2014.04.059

Elias, Watheq, Elliott, Martin ORCID: https://orcid.org/0000-0002-9254-9898 and Matthai, Clarence 2014. On the effect of grain boundaries on the electronic and transport properties of graphene. MRS Online Proceedings Library 1658 , pp. 88-93. 10.1557/opl.2014.504

Matthai, Clarence and March, N.H. 2013. Are there analogies between nematic organic liquids and stacking of di-concave discs representing assemblies of red blood cells? Physics and Chemistry of Liquids 51 (6) , pp. 746-748. 10.1080/00319104.2013.816959

Elias, Watheq, Elliott, M. and Matthai, Clarence 2013. Electrical transport of zig-zag and folded graphene nanoribbons. MRS Proceedings 1549 , p. 41. 10.1557/opl.2013.950

Jones, Gareth, Elliott, Martin ORCID: https://orcid.org/0000-0002-9254-9898 and Matthai, Clarence Cherian 2012. Electrical conduction along porphyrin wires using the self-consistent extended-Huckel and non-equilibrium Green's function methods. MRS Proceedings 1414 , pp. 20-25. 10.1557/opl.2012.138

Matthai, Clarence Cherian and March, N. H. 2011. The application of condensed matter methods to the study of the conformation and elastic properties of biopolymers and the transport of DNA through cell membranes. Theoretical Chemistry Accounts 130 (4-6) , pp. 1155-1167. 10.1007/s00214-011-1022-9

Gavartin, J. L. and Matthai, Clarence Cherian 2011. Modelling of the Structural and Dynamical Properties of Porous Silicon. Presented at: MRS Fall Meeting, Boston, MA, 27 November - 1 December 1995. MRS Proceedings. Materials Research Society Conference Proceedings , vol.407 Cambridge University Press, 10.1557/PROC-407-45

Bhatti, Q. A., Moran, G. J. and Matthai, Clarence Cherian 2011. Computer Simulation of Surface Diffusion of Silicon and Carbon Adatoms on SiC(001). Presented at: MRS Spring Meeting 1996, San Francisco, CA, 4 - 12 April 1996. MRS Proceedings. Materials Research Society Conference Proceedings , vol.423 Cambridge University Press, pp. 439-444. 10.1557/PROC-423-439

Moran, G. J., Morrison, I. and Matthai, Clarence Cherian 2011. A molecular dynamics study of InGaAs layers on GaAs substrates. Presented at: 1994 MRS Spring Meeting, San Francisco, CA, 4 - 8 April 1994. MRS Proceedings. Materials Research Society Conference Proceedings , vol.340 Cambridge University Press, pp. 315-320. 10.1557/PROC-340-315

Matthai, Clarence Cherian, Moran, G. J. and Morrison, I. 2011. Computer simulation of Si and C atoms on SiC surfaces. Presented at: 1994 MRS Spring Meeting, San Francisco, CA, 4 - 8 April 1994. MRS Proceedings. Materials Research Society Conference Proceedings , vol.339 Cambridge University Press, pp. 21-26. 10.1557/PROC-339-21

Cafolla, A. A., Shen, T.-H. and Matthai, Clarence Cherian 2011. A Study of the structural properties of porous silicon. Presented at: 1992 MRS Spring Meeting & Exhibit. Symposium W: Computational Methods in Materials Science, San Francisco, CA, 27 April -1 May 1992. Published in: Glicksman, Martin E., Mark, James E. and Marsh, Steven P. eds. Computational Methods in Materials Science: Symposium Held April 27-May 1, 1992, San Francisco, California, U.S.A. (Materials Research Society Symposium Proceedings, 278). MRS (Materials Research Society) Proceedings. Materials Research Society symposium proceedings , vol.278 Pittsburgh: Cambridge University Press, 10.1557/PROC-278-109

Hughes, A., Shen, T-H. and Matthai, Clarence Cherian 2011. Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System. Presented at: 1992 MRS Spring Meeting - Symposium B . Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing, San Francisco, CA, 27-29 April 1992. Published in: Helms, C. Robert, Hirose, Masataka and Nemanich, Robert J. eds. Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 192, San Francisco, California, U.S.A. MRS Proceedings. Materials Research Society symposium proceedings (259) Pittsburgh, Pa: Cambridge University Press, 10.1557/PROC-259-505

March, N. H., Chulkov, E. V., Echenique, P. M. and Matthai, Clarence Cherian 2010. Phase transitions driven by quasiparticle interactions. Phase Transitions 83 (12) , pp. 1085-1095. 10.1080/01411594.2010.509641

March, N. H. and Matthai, Clarence Cherian 2009. The application of quantum chemistry and condensed matter theory in studying amino-acids, protein folding and anticancer drug technology. Theoretical Chemistry Accounts 125 (3-6) , pp. 193-201. 10.1007/s00214-009-0558-4

Matthai, Clarence Cherian, March, N. H. and Lamoen, D. 2009. Supercooled molecular liquids and the glassy phases of chemically bonded N, P, As, Si and Ge. Physics and Chemistry of Liquids 47 (6) , pp. 607-613. 10.1080/00319100903148553

March, N. H. and Matthai, Clarence Cherian 2009. Electron/hole liquids in highTcsuperconductors and easy paths for supercarriers through the vibrational lattice. Physics and Chemistry of Liquids 47 (4) , pp. 467-470. 10.1080/00319100902873037

Matthai, Clarence Cherian, Grout, P. J. and March, N. H. 2009. Force fields in d-band metals. International Journal of Quantum Chemistry 14 (S12) , pp. 443-459. 10.1002/qua.560140839

Matthai, Clarence Cherian and March, N. H. 2008. Velocity of sound and the BCS interaction parameter in five body-centred-cubic crystals. Superconductor Science and Technology 21 (1) , 015012. 10.1088/0953-2048/21/01/015012

Angilella, G. G. N., March, N. H., Matthai, Clarence Cherian and Pucci, R. 2008. The role of anharmonicity in a variety of phase transitions controlled by pressure, including melting, brittle-to-ductile transition, and the liquid-vapour critical point. Journal of Physics: Conference Series 121 (1) , 012001. 10.1088/1742-6596/121/1/012001

Matthai, Clarence Cherian and March, N. H. 2007. On the pressure dependence of the melting temperature and the monovacancy formation energy in transition metals. Philosophical Magazine Letters 87 (7) , pp. 475-482. 10.1080/09500830701320307

March, N. H., Suhai, S. and Matthai, Clarence Cherian 2007. Melting temperature and a precursor phase change in bacteriorhodopsin as function of pH. Physics and Chemistry of Liquids 45 (6) , pp. 695-699. 10.1080/00319100701593984

Matthai, Clarence Cherian and March, N. H. 2006. Melting transitions in metallic elements correlated with shear modulus and atomic volume. Physics and Chemistry of Liquids 44 (3) , pp. 329-336. 10.1080/00319100500284926

Matthai, Clarence Cherian and Bacon, D. J. 2006. Relaxed vacancy formation and surface energies in b.c.c. transition metals. Philosophical Magazine A 52 (1) , pp. 1-3. 10.1080/01418618508237600

Matthai, Clarence Cherian 2006. Calculation of defect migration energies using molecular dynamics. Philosophical Magazine A 52 (3) , pp. 305-308. 10.1080/01418618508237628

Balaban, A. T., Klein, D. J., March, N. H. and Matthai, Clarence Cherian 2005. Transport and thermodynamic properties in low melting point ionic liquids related ton-alkyl chain length. Physics and Chemistry of Liquids 43 (4) , pp. 403-407. 10.1080/00319100500165976

Oloumi, M., Matthai, Clarence Cherian and Shen, T. H. 2005. Band Offsets in Strained Layer Superlattices. Iranian Journal of Physics Research 4 (3) , pp. 77-80.

Matthai, Clarence Cherian and Loebl, H. C. 2004. Simulation Studies of Protein Translocation in Mitochondria. Physica A Statistical Mechanics and its Applications 342 (3-4) , pp. 612-622. 10.1016/j.physa.2004.05.039

Randel, Richard, Loebl, Hannah C. and Matthai, Clarence Cherian 2004. Molecular dynamics simulations of polymer translocations. Macromolecular Theory and Simulations 13 (5) , pp. 387-391. 10.1002/mats.200300019

March, N. H. and Matthai, Clarence Cherian 2004. A representation of the energy gap in diamond-structure semiconductors. Philosophical Magazine Letters 84 (5) , pp. 335-340. 10.1080/09500830410001675696

Matthai, Clarence Cherian and Loebl, H. 2004. Molecular modelling of Bio-polymer translocation across nanopores in cellular membranes. Presented at: Modeling and Simulating Materials Nanoworld, Symposium- "Modeling and Simulating Materials Nanoworld" (Part C), of the 3rd International Conference "Computational Modeling and Simulation of Materials, Sicily, Italy, 30 May - 4 June 2004. Published in: Vincenzini, Pietro and Zerbetto, Francesco eds. Modeling and simulating materials nanoworld. (44)

Matthai, Clarence Cherian and Graham, I. 2003. Investigation of the Forest-Fire Model on a Small-World Network. Physical Review E 68 (3) , 036109. 10.1103/PhysRevE.68.036109

Loebl, Hannah C., Randel, R., Goodwin, Simon Paul and Matthai, Clarence Cherian 2003. Simulation Studies of Polymer Translocation through a Channel. Physical Review E 67 (4) , 04191301-04191305. 10.1103/PhysRevE.67.041913

McCaffery, G., Griffith, Tudor Morley, Frennaux, Michael Paul, Naka, Katerina and Matthai, Clarence Cherian 2002. Wavelet and receiver operating characteristic analysis of heart rate variability. Physical Review E 65 (2) , 022901. 10.1103/PhysRevE.65.022901

March, N. H., Doren, V. E. Van and Matthai, Clarence Cherian 2002. Trends of combinations of elastic constants of covalent semiconductors with mean interelectronic separation. Philosophical Magazine 82 (12) , pp. 2475-2481. 10.1080/01418610210145376

March, N. H., Doren, V. E. Van and Matthai, Clarence Cherian 2002. Trends of combinations of elastic constants of covalent semiconductors with mean interelectronic separation. Philosophical Magazine A 82 (12) , pp. 2475-2481. 10.1080/01418610210145376

Matthai, Clarence Cherian, Maurice, R. G. and Randel, R. 2001. Molecular dynamics simulations of biological polymers. Abstracts of Papers of the American Chemical Society 221 (1) , U330.

Osetsky, Y. N, Bacon, D. J, Matthai, Clarence Cherian and March, N. H 2000. Cleavage force, tribology and bond breaking in some transition metals. Journal of Physics and Chemistry of Solids 61 (12) , pp. 2055-2060. 10.1016/S0022-3697(00)00208-0

Westwood, David, Brown, I. H., Linsell, D. N. J. and Matthai, Clarence Cherian 2000. Dynamics of the growth of InAs quantum dots on GaAs(001) substrates. Presented at: Semiconductor quantum dots, San Francisco, CA, 5-8 April 1999. Published in: Moss, S. C., Ila, D., Lee, H. W. H. and Norris, D. J. eds. Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A. Materials Research Society symposia proceedings (571) Warrendale, PA: Materials Research Society, pp. 337-342.

Maurice, R. and Matthai, Clarence Cherian 1999. Force-extension curves for a single polymer chain under varying solvent conditions. Physical Review E 60 (3) , pp. 3165-3169. 10.1103/PhysRevE.60.3165

Westwood, David I., Sobiesierski, Zbigniew and Matthai, Clarence Cherian 1999. The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science 144-45 , pp. 484-487. 10.1016/S0169-4332(98)00845-9

Westwood, David I., Sobiesierski, Zbigniew, Matthai, Clarence Cherian, Steimetz, E., Zettler, T. and Richter, W. 1998. Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16 (4) , pp. 2358-2366. 10.1116/1.590175

James, Emyr and Matthai, Clarence Cherian 1998. An extended BFM model for simulation of copolymers at an interface. Computational Materials Science 10 (1-4) , pp. 175-179. 10.1016/S0927-0256(97)00177-8

Sobiesierski, Zbigniew, Westwood, David I. and Matthai, Clarence Cherian 1998. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces. Journal of Physics: Condensed Matter 10 (1) , pp. 1-43. 10.1088/0953-8984/10/1/005

Matthai, Clarence Cherian and Moran, G. A. 1998. Adsorption and diffusion of Ga, In and As adatoms on (001) and (111) GaAs surfaces: a computer simulation study. Applied Surface Science 123-4 , pp. 653-657. 10.1016/S0169-4332(97)00442-X

Ke, M., Matthai, Clarence Cherian, Pavlov, A. and Laiho, R. 1998. Schottky barrier height at the Au/porous silicon interface. Applied Surface Science 123-4 , pp. 454-457. 10.1016/S0169-4332(97)00488-1

Bhatti, Q. A. and Matthai, Clarence Cherian 1998. Critical thickness and growth modes of SiC layers on Si substrates - a molecular dynamics study. Applied Surface Science 123-4 , pp. 7-10. 10.1016/S0169-4332(97)00499-6

Bhatti, Q. A. and Matthai, Clarence Cherian 1998. Computer simulation of adatom dynamics on single-stepped SiC(001) surfaces. Thin Solid Films 318 (1-2) , pp. 46-51. 10.1016/S0040-6090(97)01136-X

Anyele, H.T., Griffiths, C. L., Cafolla, A.A., Matthai, Clarence Cherian and Williams, R.H. 1998. Metal-semiconductor fluctuations on reconstructed Sn--Si(111) surfaces. Applied Surface Science 123-4 , pp. 480-484. 10.1016/S0169-4332(97)00527-8

Matthai, Clarence Cherian and March, N. H. 1997. Cleavage force as a function of separation in a finite model of silicon with a chemically bonded force field. Journal of Physics and Chemistry of Solids 58 (5) , pp. 765-767. 10.1016/S0022-3697(96)00197-7

Bass, J. M. and Matthai, Clarence Cherian 1997. Theoretical study of the Si/GaAs(001)-c(4×4) surface. Physical Review B 55 (19) , 13032. 10.1103/PhysRevB.55.13032

Levermann, A. H., Howes, P .B., Edwards, K. A., Anyele, H. T., Matthai, Clarence, MacDonald, John Emyr ORCID: https://orcid.org/0000-0001-5504-1692, Feidenhans'l, R., Lottermoser, L., Seehofer, L., Falkenberg, G. and Johnson, R. L. 1996. The atomic structure of the Si(111) reconstruction. Applied Surface Science 104-05 , pp. 124-129. 10.1016/S0169-4332(96)00132-8

Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian and Williams, R. H. 1996. Ballistic electron emission microscopy of InAs grown on GaAs(100). Surface Science 352-4 , pp. 861-864. 10.1016/0039-6028(95)01288-5

Ke, Mao-Long, Westwood, David, Matthai, Clarence Cherian, Richardson, Bernard E. ORCID: https://orcid.org/0000-0002-9510-0455 and Williams, R. H. 1996. Hot-electron transport through Au/GaAs and Au/GaAs/AlAs heterojunction interfaces: ballistic-electron-emission-microscopy measurement and Monte Carlo simulation. Physical Review B 53 (8) , 4845. 10.1103/PhysRevB.53.4845

Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian, Richardson, Bernard E. ORCID: https://orcid.org/0000-0002-9510-0455 and Williams, R. H. 1996. Ballistic electron emission microscopy of Au-InAs-GaAs system. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 2786-2789. 10.1116/1.588833

Bass, J. M., Morris, S. J. and Matthai, Clarence Cherian 1996. Theoretical reflectance anisotropy spectroscopy and scanning tunnelling microscopy study of the gaas(001) (2 × 4) surface. Materials Science and Engineering: B 37 (1-3) , pp. 89-92. 10.1016/0921-5107(95)01461-6

Bass, J. M. and Matthai, Clarence Cherian 1996. Ab initio calculations of the reflectance anisotropy spectrum. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14 (4) , pp. 3075-3079. 10.1116/1.589067

Anyele, H. T., Shen, T-H. and Matthai, Clarence Cherian 1996. The linear optical response of reconstructed Sn/Si(111) surfaces. Journal of Physics: Condensed Matter 8 (23) , pp. 4139-4144. 10.1088/0953-8984/8/23/006

Anyele, H. T. and Matthai, Clarence Cherian 1996. Calculation of the electronic structure and the linear optical response of the Sb- and Sn-Si(111) √3 x √3 surfaces. Journal of Physics: Condensed Matter 8 (36) , pp. 6585-6596. 10.1088/0953-8984/8/36/011

Bass, J. M., Matthai, Clarence Cherian and Saynor, K. A. 1996. A Theoretical study of the STM images of the GaAs (001) reconstructed. Presented at: 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, 15-19 August 1994. Published in: Lockwood, David J. ed. 22nd International Conference on the Physics of Semiconductors: Vancouver, Canada, August 15-19, 1994 (Proceedings). University of British Columbia: Vancouver: World Scientific,

Steimetz, E., Schienle, F., Zettler, J. T., Richter, W., Westwood, D., Sobiesierski, Zbigniew (LEARN), Matthai, Clarence Cherian, Junno, B., Miller, M. and Samuelson, L. 1996. In-Situ Control of InAs Quantum Dot Evolution in MBE, MOVPE and MOMBE. Presented at: 23rd International conference on the physics of semiconductors., Berliin, Germany, 21-26 July 1996. Published in: Lockwoood, David J., Scheffler, M. and Zimmermann, R. eds. 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21-26, 1996 (Proceedings). (3800) World Scientific, 1297 -1300.

Morris, S., Bass, J. and Matthai, Clarence Cherian 1995. Reflectance anisotropy of the GaAs(001) (2×4) surface: Ab initio calculations. Physical Review B 52 (23) , pp. 16739-16743. 10.1103/PhysRevB.52.16739

Matthai, Clarence Cherian, Gavartin, J. L. and Cafolla, A. A. 1995. Structural and elastic properties of porous silicon. Thin Solid Films 255 (1-2) , pp. 174-176. 10.1016/0040-6090(94)05648-W

Matthai, Clarence Cherian, Bass, J. M., Jackson, M. D., Thornton, J. M. C. and Weightman, P. 1995. A comparison of observed and simulated scanning tunneling images of the reconstructed GaAs(001) surface. Materials Science and Engineering: B 35 (1-3) , pp. 489-492. 10.1016/0921-5107(95)01348-2

Ke, Mao-long, Westwood, David I., Wilks, S., Heghoyan, S., Kestle, A., Matthai, Clarence Cherian, Richardson, Bernard E. ORCID: https://orcid.org/0000-0002-9510-0455 and Williams, R. H. 1995. Ballistic electron emission microscopy of strained and relaxed In0.35Ga0.65As/AlAs interfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13 (4) , p. 1684. 10.1116/1.587878

Ke, Mao-long, Westwood, David, Matthai, Clarence Cherian and Richardson, Bernard E. ORCID: https://orcid.org/0000-0002-9510-0455 1995. Ballistic elecron emission microscopy of InAs/Ga1-xA1xAs relaxed heterostructure interfaces. Materials Science and Engineering: B 35 (1-3) , pp. 349-352. 10.1016/0921-5107(95)01392-X

Gavartin, J. L., Matthai, Clarence Cherian and Morrison, I. 1995. The influence of the spatial structure on the electronic properties of porous silicon: quantum chemical study. Thin Solid Films 255 (1-2) , pp. 39-42. 10.1016/0040-6090(94)05600-I

Gavartin, J. L. and Matthai, Clarence Cherian 1995. The electronic structure and luminescence properties of porous silicon and silicon nanoclusters. Materials Science and Engineering: B 35 (1-3) , pp. 459-462. 10.1016/0921-5107(95)01405-5

Bass, J. M. and Matthai, Clarence Cherian 1995. Scanning-tunneling-microscopy and spectroscopy simulation of the GaAs(110) surface. Physical Review B 52 (7) , pp. 4712-4715. 10.1103/PhysRevB.52.4712

Spaltmann, D., Morris, S. J., Matthai, Clarence Cherian and Williams, Robert 1995. Reflectance anisotropy and Raman scattering spectroscopy studies of ZnSe grown on GaAs(001). Journal of Physics D: Applied Physics 28 (12) , 2574. 10.1088/0022-3727/28/12/027

Saynor, K. A., Bass, J. M. and Matthai, Clarence Cherian 1995. Modification of the Band offsets at the GaAs/AlAs interface. Presented at: 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, 15-19 August 1994. Published in: Lockwood, David J. ed. 22nd International Conference on the Physics of Semiconductors: Vancouver, Canada, August 15-19, 1994 (Proceedings). , vol.1 University of British Columbia : Vancouver: World Scientific,

Morris, S. J., Bass, J. M., Matthai, Clarence Cherian, Milman, V. and Payne, M. C. 1994. Reflectance anisotropy of reconstructed GaAs(001) surfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12 (4) , pp. 2684-2688. 10.1116/1.587231

Matthai, Clarence Cherian 1994. Bonding and dipoles at semiconductor interfaces. Philosophical Magazine Part B 69 (5) , pp. 941-944. 10.1080/01418639408240162

Bass, J. M. and Matthai, Clarence Cherian 1994. Theoretical simulation of scanning-tunneling-microscopy images of the GaAs(001)β(2×4) and β(4×2) surfaces. Physical Review B 50 (15) , pp. 11212-11215. 10.1103/PhysRevB.50.11212

Morris, S J and Matthai, Clarence Cherian 1994. Reflectance anisotropy of reconstructed semiconductor surfaces. Presented at: Formation of semiconductor interfaces : 4th International Conference( ICFSI- 4 ), Jülich, Germany, 14-18 June 1993. Published in: Lengeler, Bruno, Luth, H., Moench, W. and Pollman, J. eds. Formation of semiconductor interfaces: proceedings of the 4th International Conference on the Formation of Semiconductor Interfaces, Forschungszentrum Julich, 14-18 June 1993. Singapore; New Jersey: World Scientific,

Saynor, K. A., Bass, J. M., Matthai, Clarence Cherian, Payne, M.. C and Milman, V. 1994. A theoretical study of Band Offset modification at the GaAs/AlAs interface employing Si interlayers. Presented at: Formation of semiconductor interfaces : 4th International Conference (ICFSI -4), Jülich, Germany, 14-18 June 1993. Published in: Lengeler, B., Luth, H., Moench, W. and Pollman, J. eds. Formation of semiconductor interfaces : proceedings of the 4th International Conference, Forschungszentrum Jülich, 14-18 June 1993. Singapore, River Edge, NJ: World Scientific,

Morris, S. J., Bass, J. M., Westwood, D. I., Woolf, D. A., Matthai, Clarence Cherian, Williams, R. H., Reinhardt, F., Rumberg, J., Rose, K.C. and Richter, W. 1994. Reflectance anisotrophy of the GaAs(001) surface. Surface Review and Letters 01 (04) , pp. 481-484. 10.1142/S0218625X94000485

Whittle, R., McGovern, I. T., Hughes, A., Shen, T -H and Matthai, Clarence Cherian 1993. A theoretical study of the electronic structure of clean GaP(110) and Sb on GaP(110) surfaces. Journal of Physics: Condensed Matter 5 (36) , pp. 6555-6562. 10.1088/0953-8984/5/36/010

Shen, T.H. and Matthai, Clarence Cherian 1993. Calculation of the optical properties of As molecules on Si substrates. Surface Science 287-28 , pp. 672-675. 10.1016/0039-6028(93)91051-P

Matthai, Clarence Cherian, Srivastava, G. P. and Palmer, D. W. 1993. Control of electrical barriers at semiconductor heterojunctions by interface doping [and discussion]. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 344 (1673) , pp. 579-586. 10.1098/rsta.1993.0110

Griffiths, C. L., Anyele, H. T., Matthai, Clarence Cherian, Cafolla, A. A. and Williams, R. H. 1993. Effect of surface reconstruction on Fermi-level pinning in the Sn on Si(111) system. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11 (4) , pp. 1559-1563. 10.1116/1.586969

Bass, J. M., Matthai, Clarence Cherian, Milman, V. and Payne, M. 1993. Electronic structure of the Si6/Ge6(111) superlattice strained to a Ge substrate. Semiconductor Science and Technology 8 (12) , pp. 2121-2124. 10.1088/0268-1242/8/12/015

Anyele, H. T., Cafolla, A. A. and Matthai, Clarence Cherian 1993. A study of the electronic structure and Schottky barriers at reconstructed Sn/Si interfaces. Applied Surface Science 70-71 (2) , pp. 433-437. 10.1016/0169-4332(93)90555-P

Shen, T.-H. and Matthai, Clarence Cherian 1992. The effect of germanium bilayers on the band offsets at the InAs--GaAs interface. Applied Surface Science 56-58 (Part 2) , pp. 746-748. 10.1016/0169-4332(92)90331-Q

Matthai, Clarence Cherian, Rees, N. V. and Shen, T. H. 1992. Schottky barriers and interface structure at silicide-silicon interfaces. Applied Surface Science 56-58 (Part 1) , pp. 525-530. 10.1016/0169-4332(92)90282-3

Baker, D. L., Matthai, Clarence Cherian and Stephens, N. M. 1992. Modelling viscous fingering on a parallel computer. Molecular Simulation 9 (1) , pp. 41-47. 10.1080/08927029208048260

Ashu, P. and Matthai, Clarence Cherian 1992. Molecular dynamics simulation of germanium on silicon (001) substrates. Applied Surface Science 56-58 (Part 2) , pp. 661-664. 10.1016/0169-4332(92)90318-R

Matthai, Clarence Cherian, Shen, T. H. and Oloumi, M. 1992. Band Offsets in Strained Layer Superlattices. Presented at: the Fifteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XV), Phoenix, AZ, 13-18 Oct 1991. Published in: Katz, A., Buckley, N. and Swaminathan, V. eds. Proceedings of the Fifteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XV). Proceedings (Electrochemical Society) Pennington, NJ: Electrochemical Society, p. 134.

Shen, T-H. and Matthai, Clarence Cherian 1992. A theoretical study of band offset modification at the InAs/GaAs interface. Presented at: 1992 MRS Spring Meeting & Exhibit. Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect, San Francisco, CA, 29 April - 1 May 1992. Published in: Nolte, D. D., Haegel, N. M. and Goossen, K. W. eds. Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity, and the Photorefractive Effect : Symposium Held April 29-May (MRS Symposium proceedings). MRS Proceedings. MRS Symposium proceedings , vol.261 Pittsburgh: Cambridge University Press, 10.1557/PROC-261-81

Shen, T. -H. and Matthai, Clarence Cherian 1991. Pressure dependence of the Schottky barrier height at the nickel-silicide/silicon interface. Journal of Physics: Condensed Matter 3 (5) , pp. 613-615. 10.1088/0953-8984/3/5/010

Shen, T. -H. and Matthai, Clarence Cherian 1991. The electronic structure of Si(100) and As/Si(100) surfaces. Journal of Physics: Condensed Matter 3 (32) , pp. 6169-6172. 10.1088/0953-8984/3/32/022

Oloumi, M. and Matthai, Clarence Cherian 1991. Electronic structure of InGaAs and band offsets in InGaAs/GaAs superlattices. Journal of Physics: Condensed Matter 3 (50) , pp. 9981-9987. 10.1088/0953-8984/3/50/004

Bass, J. M. and Matthai, Clarence Cherian 1991. The effect of metal layers on the band offsets at the silicon-germanium interface. Semiconductor Science and Technology 6 (1) , pp. 69-70. 10.1088/0268-1242/6/1/014

Bass, J. M. and Matthai, Clarence Cherian 1991. Electronic structure of the Si6/(Si0.5Ge0.5)6 001 superlattices. Semiconductor Science and Technology 6 (2) , pp. 109-111. 10.1088/0268-1242/6/2/007

Ashu, P., Matthai, Clarence Cherian and Shen, T. -H. 1991. Dynamics of atoms on silicon substrates. Surface Science 251-2 , pp. 955-959. 10.1016/0039-6028(91)91132-H

Ashu, P. and Matthai, Clarence Cherian 1991. A molecular dynamics study of the critical thickness of Ge layers on Si substrates. Applied Surface Science 48-49 , pp. 39-43. 10.1016/0169-4332(91)90304-3

Bass, J. M. and Matthai, Clarence Cherian 1990. Electronic structure of (111)Si/Ge superlattices. Journal of Physics: Condensed Matter 2 (38) , pp. 7841-7846. 10.1088/0953-8984/2/38/009

Oloumi, M. and Matthai, Clarence Cherian 1990. Electronic structure and band discontinuities in the InAs/GaAs system. Journal of Physics: Condensed Matter 2 (23) , pp. 5153-5160. 10.1088/0953-8984/2/23/005

Bass, J. M. and Matthai, Clarence Cherian 1990. A strain dependent study of the (001) Si6Ge6 superlattice. Semiconductor Science and Technology 5 (7) , pp. 707-709. 10.1088/0268-1242/5/7/012

Oloumi, M. and Matthai, Clarence Cherian 1990. Study of the electronic structure and band offsets of the GaSb/InAs system. Semiconductor Science and Technology 5 (9) , 947. 10.1088/0268-1242/5/9/004

Matthai, Clarence Cherian, Bass, J. M. and Oloumi, M. 1990. Band offsets and electron localization in semiconductor interfaces and superlattices. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8 (4) , 916. 10.1116/1.584942

Matthai, Clarence Cherian and Ashu, P. 1990. Computer simulation of metal-semiconductor and semiconductor-semiconductor interfaces. Le Journal de Physique Colloques 51 (C1) , C1- 873. 10.1051/jphyscol:19901137

Rees, N. V. and Matthai, Clarence Cherian 1989. The Schottky barrier height at the NiSi2-Si(111) interface. Semiconductor Science and Technology 4 (5) , pp. 412-415. 10.1088/0268-1242/4/5/014

Bass, J. M., Oloumi, M. and Matthai, Clarence Cherian 1989. A method for determining band offsets in semiconductor superlattices and interfaces. Journal of Physics: Condensed Matter 1 (51) , pp. 10625-10628. 10.1088/0953-8984/1/51/032

Ashu, P. and Matthai, Clarence Cherian 1989. Computer simulation of Si and Ge adatoms and thin layers on Si substrates. Journal of Physics: Condensed Matter 1 (Supp B) , SB17-SB20. 10.1088/0953-8984/1/SB/004

Oloumi, M. and Matthai, Clarence Cherian 1989. Band offset at InAs/GaAs interfaces. Journal of Physics: Condensed Matter 1 (SB) , SB211-SB212. 10.1088/0953-8984/1/SB/046

Matthai, Clarence Cherian 1989. Molecular dynamics simulation of transition metals as silicon substrates. Molecular Simulation 3 (1-3) , pp. 101-114. 10.1080/08927028908034621

Rees, N. V. and Matthai, Clarence Cherian 1988. The Schottky barrier height at the CoSi2/Si(111) interface. Journal of Physics C: Solid State Physics 21 (27) , L981-L984. 10.1088/0022-3719/21/27/002

Rees, N. V. and Matthai, Clarence Cherian 1988. Electronic-structure of v-si interfaces. Vacuum 38 (4-5) , p. 430. 10.1016/0042-207X(88)90116-9

Matthai, Clarence Cherian and Bacon, D. J. 1985. The collapse of vacancy clusters: a molecular dynamics study. Journal of Nuclear Materials 135 (2-3) , pp. 173-180. 10.1016/0022-3115(85)90075-3

Matthai, Clarence Cherian and Bacon, D. J. 1984. On the unfaulting of vacancy loops in BCC metals. Journal of Nuclear Materials 125 (2) , pp. 138-151. 10.1016/0022-3115(84)90541-5

Matthai, Clarence Cherian and Bacon, D.J. 1983. Vacancy formation and migration energies in strained crystals. Journal of Nuclear Materials 114 (1) , pp. 22-29. 10.1016/0022-3115(83)90068-5

Matthai, Clarence Cherian and March, N. H. 1982. Small angle scattering from liquids: Van der Waals forces in argon and collective mode in Na. Physics and Chemistry of Liquids 11 (3) , pp. 207-217. 10.1080/00319108208080743

Matthai, Clarence Cherian, Grout, P. J. and March, N. H. 1981. Interatomic forces in the b.c.c. transition metals. Journal of Physics and Chemistry of Solids 42 (4) , pp. 317-322. 10.1016/0022-3697(81)90147-5

Matthai, Clarence Cherian 1981. The interatomic potential and the long-range S(k) in liquids. Philosophical Magazine Part B 43 (5) , pp. 925-930. 10.1080/01418638108222357

Matthai, Clarence Cherian, Grout, P. J. and March, N. H. 1980. Study of X-ray scattering in Be using Wannier functions. Journal of Physics F: Metal Physics 10 (7) , p. 1621. 10.1088/0305-4608/10/7/028

Matthai, Clarence Cherian, Grout, P. J. and March, N. H. 1978. Bonding, superlattices and diffraction from chrystals. Physics letters. A. 68 (3-4) , pp. 351-354. 10.1016/0375-9601(78)90529-7