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Reflectance anisotrophy of the GaAs(001) surface

Morris, S. J., Bass, J. M., Westwood, D. I., Woolf, D. A., Matthai, Clarence Cherian, Williams, R. H., Reinhardt, F., Rumberg, J., Rose, K.C. and Richter, W. 1994. Reflectance anisotrophy of the GaAs(001) surface. Surface Review and Letters 01 (04) , pp. 481-484. 10.1142/S0218625X94000485

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By a combination of theoretical calculations and experiments, we have investigated the GaAs(001) surface and found the reflectance anisotropy (RA) to be extremely sensitive to the atomic configuration upon the surface. By performing a series of ab initio pseudopotential calculations of the optical response of the (2×4) surface reconstruction we find that good agreement with experiment can be obtained when the full relaxation of the surface is taken into account. Experimentally, we show that deposition of as little as 0.01 monolayer of Si modifies the surface structure sufficiently that a significant change in the RA spectrum can be observed.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: World Scientific Publishing Co
ISSN: 0218-625X
Last Modified: 04 Jun 2017 08:20

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