Detecting dopant diffusion enhancement at grain boundaries in multicrystalline silicon wafers with microphotoluminescence spectroscopy

Nguyen, Hieu T., Mokkapati, Sudha ORCID: https://orcid.org/0000-0003-3260-6560 and Macdonald, Daniel 2017. Detecting dopant diffusion enhancement at grain boundaries in multicrystalline silicon wafers with microphotoluminescence spectroscopy. IEEE Journal of Photovoltaics 7 (2) , pp. 598-603. 10.1109/JPHOTOV.2017.2650561

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Abstract

Employing microphotoluminescence spectroscopy at low temperatures, we are able to detect dopant diffusion enhancement along various grain boundaries and subgrain boundaries in multicrystalline silicon wafers. We find an enhancement of phosphorus diffusion at all investigated grain boundary types. In addition, the subgrain boundaries are demonstrated to contain a relatively high density of defects and impurities, suggesting that their presence does not significantly hinder the preferential diffusion of dopant atoms along the subgrain boundaries. Finally, we demonstrate that the technique can be applied to different diffused layers for solar cell applications, even at room temperature if an appropriate excitation wavelength is used. The results are validated with secondary electron dopant contrast images, which confirm the higher dopant concentration along the grain boundaries and subgrain boundaries.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
Date of First Compliant Deposit:	6 June 2017
Date of Acceptance:	5 January 2017
Last Modified:	03 Dec 2024 10:30
URI:	https://orca.cardiff.ac.uk/id/eprint/100854

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