Nguyen, Hieu T., Rougieux, Fiacre E., Yan, Di, Wan, Yimao, Mokkapati, Sudha  ORCID: https://orcid.org/0000-0003-3260-6560, de Nicolas, Silvia Martin, Seif, Johannes Peter, De Wolf, Stefaan and Macdonald, Daniel
2016.
Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy.
Solar Energy Materials and Solar Cells
145
(3)
, pp. 403-412.
10.1016/j.solmat.2015.11.006
|
Abstract
We report and explain the photoluminescence (PL) spectra from crystalline silicon (c-Si) wafers passivated by hydrogenated amorphous silicon (a-Si:H) films under various measurement conditions, utilizing the different absorption coefficients and radiative recombination mechanisms in c-Si and a-Si:H. By comparison with the luminescence properties of a-Si:H, we also demonstrate that SiNx films deposited under certain silicon-rich conditions yield luminescence spectra similar to those of a-Si:H, indicating the presence of an a-Si:H-like phase in the SiNx films. This causes a reduction in the blue response of the solar cells via parasitic absorption. In addition, with the ability to detect the specific emission from heavily-doped silicon via band-gap narrowing effects, we can unambiguously separate individual spectral PL signatures of three different layers in a single substrate: the SiNx passivation films, the diffused layers, and the underlying c-Si substrate. Finally, we apply this technique to evaluate parasitic absorption in the passivation films, and the doping density of the diffused layers on different finished solar cells, highlighting the value of this nondestructive c
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Publisher: | Elsevier |
| ISSN: | 0927-0248 |
| Date of Acceptance: | 2 November 2015 |
| Last Modified: | 02 Nov 2022 11:13 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/101245 |
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