Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)

Niu, Yuran ORCID: https://orcid.org/0000-0003-0491-892X, Zakharov, A. A. and Yakimova, R. 2017. Metal-dielectric transition in Sn-intercalated graphene on SiC(0001). Ultramicroscopy 183 , pp. 49-54. 10.1016/j.ultramic.2017.05.010

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Abstract

The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSix and SnOx interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based devices.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Advanced Research Computing @ Cardiff (ARCCA) Physics and Astronomy
Publisher:	American Chemical Society
ISSN:	0304-3991
Date of First Compliant Deposit:	15 June 2017
Date of Acceptance:	9 May 2017
Last Modified:	27 Nov 2024 23:30
URI:	https://orca.cardiff.ac.uk/id/eprint/101449

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