Graphene ribbon growth on structured silicon carbide

Stohr, Alexander, Baringhaus, Jens, Aprojanz, Johannes, Link, Stefan, Tegenkamp, Christoph, Niu, Yuran ORCID: https://orcid.org/0000-0003-0491-892X, Zakharov, Alexei A., Chen, Chaoyu, Avila, José, Asensio, Maria C. and Starke, Ulrich 2017. Graphene ribbon growth on structured silicon carbide. Annalen der Physik 529 (11) , 1700052. 10.1002/andp.201700052

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Abstract

Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The ¼- band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES).

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Epitaxial graphene, Nanoribbons, Silicon carbide, Side walls, Facets, LEEM, ARPES, AFM
Publisher:	Wiley
ISSN:	0003-3804
Date of First Compliant Deposit:	29 June 2017
Date of Acceptance:	20 April 2017
Last Modified:	14 Nov 2024 02:15
URI:	https://orca.cardiff.ac.uk/id/eprint/101908

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