Stohr, Alexander, Baringhaus, Jens, Aprojanz, Johannes, Link, Stefan, Tegenkamp, Christoph, Niu, Yuran  ORCID: https://orcid.org/0000-0003-0491-892X, Zakharov, Alexei A., Chen, Chaoyu, Avila, José, Asensio, Maria C. and Starke, Ulrich
2017.
Graphene ribbon growth on structured silicon carbide.
Annalen der Physik
529
(11)
, 1700052.
10.1002/andp.201700052
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Abstract
Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The ¼- band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES).
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Uncontrolled Keywords: | Epitaxial graphene, Nanoribbons, Silicon carbide, Side walls, Facets, LEEM, ARPES, AFM |
| Publisher: | Wiley |
| ISSN: | 0003-3804 |
| Date of First Compliant Deposit: | 29 June 2017 |
| Date of Acceptance: | 20 April 2017 |
| Last Modified: | 14 Nov 2024 02:15 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/101908 |
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