Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Deactivation of electrically supersaturated Te-doped InGaAs grown by MOCVD

Kennon, E. L., Orzali, Tommaso ORCID:, Xin, Y., Vert, A., Lind, A. G. and Jones, K. S. 2017. Deactivation of electrically supersaturated Te-doped InGaAs grown by MOCVD. Journal of Materials Science 52 (18) , pp. 10879-10885. 10.1007/s10853-017-1254-8

[thumbnail of Te Deactivation Paper v11.pdf]
PDF - Accepted Post-Print Version
Download (796kB) | Preview


Achieving and sustaining the highest doping level possible in InGaAs is critical for the reduction of contact resistance in future microelectronic applications. Tellurium (Te) is a very promising n-type dopant with high reported n-type doping densities. However, the stability of this dopant during post-growth thermal processing is unknown. Supersaturated Te-doped InGaAs layers were grown by MOCVD at 500 °C. The electrically active concentration of Te doping was 4.4 × 1019 cm−3 as grown. The thermal stability of the Te was investigated by studying the effect of post-growth annealing between 550 and 700 °C on the electrical activation. At all temperatures, the electrical activation decreased from its starting electron concentration of 4.4 × 1019 cm−3 down to 6–7 × 1018 cm−3. The rate of deactivation was measured at each temperature, and the activation energy for the deactivation process was determined to be 2.6 eV. The deactivation could be caused by either Te–Te clustering or a Te-point defect reaction. HAADF-STEM images showed no visible clustering or precipitation after deactivation. Based on previous ab initio calculations that suggest the VIII population increases as the Fermi level moves toward the conduction band, it is proposed that formation of isolated point defect complexes, possibly a Te–VIII complex, is associated with the deactivation process.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Uncontrolled Keywords: InGaAs, MOCVD, Contact resistance, TEM, SIMS
Publisher: Kluwer Academic Publishers
ISSN: 0022-2461
Date of First Compliant Deposit: 4 July 2017
Date of Acceptance: 30 May 2017
Last Modified: 06 Nov 2023 17:25

Citation Data

Cited 1 time in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item


Downloads per month over past year

View more statistics