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Number of items: 12.

Kennon, E. L., Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Xin, Y., Vert, A., Lind, A. G. and Jones, K. S. 2017. Deactivation of electrically supersaturated Te-doped InGaAs grown by MOCVD. Journal of Materials Science 52 (18) , pp. 10879-10885. 10.1007/s10853-017-1254-8
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Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Vert, Alexey, O'Brian, Brendan, Herman, Joshua L., Vivekanand, Saikumar, Papa Rao, Satyavolu S. and Oktyabrsky, Serge R. 2016. Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping. Journal of Applied Physics 120 (8) , 085308. 10.1063/1.4961522
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Vert, Alexey, Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Satyavolu, PapaRao, Whitener, Glenn and Petro, Benjamin 2016. Integration of InP and InGaAs on 300 mm Si wafers using chemical mechanical planarization. ECS Journal of Solid State Science and Technology 5 (9) , P478-P482. 10.1149/2.0101609jss
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Koh, Donghyi, Shin, Seung Heon, Ahn, Jaehyun, Sonde, Sushant, Kwon, Hyuk-Min, Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Kim, Dae-Hyun, Kim, Tae-Woo and Banerjee, Sanjay K. 2015. Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metaloxide-semiconductor device. Applied Physics Letters 107 (18) , 183509-1-183509-3. 10.1063/1.4935248

Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Vert, Alexey, Kim, Tae-Woo, Hung, P.Y., Herman, Joshua L., Vivekanand, Saikumar, Huang, Gensheng, Kelman, Max, Karim, Zia, Hill, Richard J.W. and Rao, Satyavolu S. Papa 2015. Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300mm on-axis Si (001) wafers by MOCVD. Journal of Crystal Growth 427 , pp. 72-79. 10.1016/j.jcrysgro.2015.07.013

Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Vert, Alexey, Lee, Rinus T.P., Norvilas, Aras, Huang, Gensheng, Herman, Joshua L., Hill, Richard J.W. and Rao, Satyavolu S. Papa 2015. Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers. Journal of Crystal Growth 426 , pp. 243-247. 10.1016/j.jcrysgro.2015.05.007

Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Vert, Alexey, O'Brien, Brendan, Herman, Joshua L., Vivekanand, Saikumar, Hill, Richard J. W., Karim, Zia and Papa Rao, Satyavolu S. 2015. GaAs on Si epitaxy by aspect ratio trapping: analysis and reduction of defects propagating along the trench direction. Journal of Applied Physics 118 (10) , 105307. 10.1063/1.4930594
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Loh, W.-Y., Lee, R. T.P., Tieckelmann, R., Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Sapp, B., Hobbs, C., Rao, S.S. Papa, Fuse, K., Sato, M., Fujiwara, N., Chang, L. and Uchida, H. 2015. 300mm wafer level sulfur monolayer doping for III–V materials. Presented at: Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs NY, 3-6 May 2015. Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI. New York: Institute of Electrical and Electronics Engineers (IEEE), pp. 451-454. 10.1109/ASMC.2015.7164438

Vert, Alexey, Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Dyer, Tom, Hill, Richard, Satyavolu, PapaRao, Barth, Edward, Gaylord, Richard, Hu, Shan, Vivekanand, Saikumar, Herman, Joshua, Rana, Uzma and Kaushik, Vidya 2015. Backside and edge cleaning of III–V on Si wafers for contamination free manufacturing. Presented at: Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs, NY, 3-6 May 2015. Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI. New York: Institute of Electrical and Electronics Engineers (IEEE), pp. 362-366. 10.1109/ASMC.2015.7164420

Kim, Tae-Woo, Kwon, Hyuk-Min, Shin, Seung Heon, Shin, Chan-Soo, Park, Won-Kyu, Chiu, Eddie, Rivera, Manny, Lew, Jae Ik, Veksler, Dmitry, Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789 and Kim, Dae-Hyun 2015. Impact of H2 high-pressure annealing onto InGaAs quantum-well metal–oxide–semiconductor field-effect transistors with Al2O3/HfO2 Gate-Stack. IEEE Electron Device Letters 36 (7) , pp. 672-674. 10.1109/LED.2015.2438433

Lee, R. T. P., Loh, W. Y., Tieckelmann, R., Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Huffman, C., Vert, A., Huang, G., Kelman, M., Karim, Z., Hobbs, C., Hill, R. J. W. and Papa Rao, S. S. 2015. (Invited) Technology options to reduce contact resistance in Nanoscale III-V MOSFETs. ECS Transactions 66 (4) , pp. 125-134. 10.1149/06604.0125ecst

Kim, Tae-Woo, Koh, Dong-Hyi, Shin, Chan-Soo, Park, Won-Kyu, Orzali, Tommaso ORCID: https://orcid.org/0000-0001-9446-5789, Hobbs, Chris, Maszara, Witek P. and Kim, Dae-Hyun 2015. L g=80 -nm trigate quantum-well In0.53Ga0.47As metal–oxide–semiconductor field-effect transistors with Al2O3/HfO2 gate-stack. IEEE Electron Device Letters 36 (3) , pp. 223-225. 10.1109/LED.2015.2393554

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