Selective-area epitaxy of pure Wurtzite InP nanowires: high quantum efficiency and room-temperature lasing

Gao, Qian, Saxena, Dhruv, Wang, Fan, Fu, Lan, Mokkapati, Sudha ORCID: https://orcid.org/0000-0003-3260-6560, Guo, Yanan, Li, Li, Wong-Leung, Jennifer, Caroff-Gaonac'h, Philippe ORCID: https://orcid.org/0000-0003-0160-1572, Tan, Hark Hoe and Jagadish, Chennupati 2014. Selective-area epitaxy of pure Wurtzite InP nanowires: high quantum efficiency and room-temperature lasing. Nano Letters 14 (9) , pp. 5206-5211. 10.1021/nl5021409

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Abstract

We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal–organic vapor-phase epitaxy and experimentally determine a quantum efficiency of ∼50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	III−V semiconductors; nanowire laser; nanowires; quantum efficiency; selective-area metal−organic vapor-phase epitaxy; wurtzite
Publisher:	American Chemical Society
ISSN:	1530-6984
Last Modified:	02 Nov 2022 11:53
URI:	https://orca.cardiff.ac.uk/id/eprint/103435

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