Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization

Jiang, N., Gao, Q., Parkinson, P., Wong-Leung, J., Mokkapati, Sudha ORCID: https://orcid.org/0000-0003-3260-6560, Breuer, S., Tan, H. H., Zheng, C. L., Etheridge, J. and Jagadish, C. 2013. Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization. Nano Letters 13 (11) , pp. 5135-5140. 10.1021/nl4023385

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Abstract

The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core–shell nanowires grown by metal–organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value as a result of reducing tunneling probability of carriers through the AlGaAs shell, beyond which the carrier lifetime reduces due to the diffusion of Ga–Al and/or impurities across the GaAs/AlGaAs heterointerface. Interdiffusion at the heterointerface is observed directly using high-angle annular dark field scanning transmission electron microscopy. We achieve room temperature minority carrier lifetimes of 1.9 ns by optimizing the shell growth with the intention of reducing the effect of interdiffusion.

Item Type:	Article
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	GaAs/AlGaAs; HAADF-STEM; minority carrier lifetimes; MOCVD; nanowires
Publisher:	American Chemical Society
ISSN:	1530-6984
Last Modified:	02 Nov 2022 11:53
URI:	https://orca.cardiff.ac.uk/id/eprint/103456

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