Skiba-Szymanska, Joanna, Stevenson, R. Mark, Varnava, Christiana, Felle, Martin, Huwer, Jan, Muller, Tina, Bennett, Anthony J.  ORCID: https://orcid.org/0000-0002-5386-3710, Lee, James P, Farrer, Ian, Krysa, Andrey B, Spencer, Peter, Goff, Lucy E, Ritchie, David A, Heffernan, Jon and Shields, Andrew J
2017.
Universal growth scheme for quantum dots with low fine-structure splitting at various emission wavelengths.
Physical Review Applied
8
(1)
, 014013.
10.1103/PhysRevApplied.8.014013
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Abstract
Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fiber-optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure splitting (FSS) between exciton eigenstates. Moreover, QDs can be engineered to emit at standard telecom wavelengths. To achieve sufficient signal intensity for applications, QDs have been incorporated into one-dimensional optical microcavities. However, combining these properties in a single device has so far proved elusive. Here, we introduce a growth strategy to realize QDs with small FSS in the conventional telecom band, and within an optical cavity. Our approach employs ‘‘droplet-epitaxy’’ of InAs quantum dots on (001) substrates. We show the scheme improves the symmetry of the dots by 72%. Furthermore, our technique is universal, and produces low FSS QDs by molecular beam epitaxy on GaAs emitting at ∼900 nm, and metal-organic vapor-phase epitaxy on InP emitting at ∼1550 nm, with mean FSS 4× smaller than for Stranski-Krastanow QDs.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Engineering |
| Publisher: | American Physical Society |
| ISSN: | 2331-7019 |
| Date of First Compliant Deposit: | 1 December 2017 |
| Last Modified: | 05 May 2023 09:37 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/106434 |
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