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Universal growth scheme for quantum dots with low fine-structure splitting at various emission wavelengths

Skiba-Szymanska, Joanna, Stevenson, R. Mark, Varnava, Christiana, Felle, Martin, Huwer, Jan, Muller, Tina, Bennett, Anthony J. ORCID:, Lee, James P, Farrer, Ian, Krysa, Andrey B, Spencer, Peter, Goff, Lucy E, Ritchie, David A, Heffernan, Jon and Shields, Andrew J 2017. Universal growth scheme for quantum dots with low fine-structure splitting at various emission wavelengths. Physical Review Applied 8 (1) , 014013. 10.1103/PhysRevApplied.8.014013

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Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fiber-optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure splitting (FSS) between exciton eigenstates. Moreover, QDs can be engineered to emit at standard telecom wavelengths. To achieve sufficient signal intensity for applications, QDs have been incorporated into one-dimensional optical microcavities. However, combining these properties in a single device has so far proved elusive. Here, we introduce a growth strategy to realize QDs with small FSS in the conventional telecom band, and within an optical cavity. Our approach employs ‘‘droplet-epitaxy’’ of InAs quantum dots on (001) substrates. We show the scheme improves the symmetry of the dots by 72%. Furthermore, our technique is universal, and produces low FSS QDs by molecular beam epitaxy on GaAs emitting at ∼900 nm, and metal-organic vapor-phase epitaxy on InP emitting at ∼1550 nm, with mean FSS 4× smaller than for Stranski-Krastanow QDs.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: American Physical Society
ISSN: 2331-7019
Date of First Compliant Deposit: 1 December 2017
Last Modified: 03 Nov 2022 09:55

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