Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Thorpe, B., Kalna, K., Langbein, F. C. ORCID: https://orcid.org/0000-0002-3379-0323 and Schirmer, S. 2017. Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor. Journal of Applied Physics 122 (22) , 223903. 10.1063/1.4994148

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Abstract

Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with a Bloch equation model using a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings is developed and applied to a spin field effect transistor (spinFET) operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a \SI{25}{nm} gate length \chem{In_{0.7}Ga_{0.3}As} metal-oxide-semiconductor field-effect transistor (MOSFET) with a CMOS compatible architecture. We observe non-uniform decay of the net magnetization between the source and gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and drain. We demonstrate coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current is strain-sensitive and can be increased twofold by strain induced into the channel.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Computer Science & Informatics
Publisher:	AIP Publishing
ISSN:	0021-8979
Funders:	Cymru National Research Network for Advanced Engineering and Materials (grant NRN082)
Date of First Compliant Deposit:	19 November 2017
Date of Acceptance:	14 November 2017
Last Modified:	20 Nov 2024 21:45
URI:	https://orca.cardiff.ac.uk/id/eprint/106719

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