Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy

Mokkapati, Sudha ORCID: https://orcid.org/0000-0003-3260-6560, Tan, H. H. and Jagadish, C. 2007. Multiple wavelength InGaAs quantum dot lasers using selective area epitaxy. Applied Physics Letters 90 (17) , 171104. 10.1063/1.2731729

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Abstract

The authors demonstrate multiple wavelength lasers fabricated from InGaAs quantum dots. Selective area epitaxy is used to grow the active region, consisting of five layer stack of InGaAs quantum dots with different band gap energies in selected regions of the substrate, for fabrication of the lasers. The mechanism responsible for engineering of the band gap of quantum dots is discussed. The performance of the selectively grown lasers is compared to the lasers fabricated from structures grown in a standard, nonselective area growth process.

Item Type:	Article
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	American Institute of Physics
ISSN:	0003-6951
Last Modified:	03 Nov 2022 10:34
URI:	https://orca.cardiff.ac.uk/id/eprint/108459

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