III-V semiconductor nanowires for optoelectronic device applications

Mokkapati, Sudha ORCID: https://orcid.org/0000-0003-3260-6560, Jiang, Nian, Saxena, Dhruv, Parkinson, Patrick, Qiang, Gao, Hark, Hoe Tan and Jagadish, Chennupati 2013. III-V semiconductor nanowires for optoelectronic device applications. Presented at: 2013 International Conference on Microwave and Photonics (ICMAP), Jarkhand, India, 13-15 December 2013. Microwave and Photonics (ICMAP): 2013 International Conference on Microwave and Photonics (ICMAP). IEEE, pp. 1-3. 10.1109/ICMAP.2013.6733456

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Abstract

III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the radiative lifetime of minority carriers in the nanowires is necessary for device applications. Due to the large surface area to volume ratio in the nanowires, non-radiative recombination associated with surface states often results in low quantum efficiency. The quantum efficiency of the nanowires can be increased either by increasing τnr or by reducing τr. We present experimental results on these two different approaches to increase the quantum efficiency of semiconductor nanowires.

Item Type:	Conference or Workshop Item (Paper)
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	GaAs nanowires, core-shell-cap nanowires, quantum efficiency, plasmonic nanowires, III–V semiconductor nanowires
Publisher:	IEEE
ISBN:	9781479921751
Last Modified:	23 Oct 2022 12:47
URI:	https://orca.cardiff.ac.uk/id/eprint/108674

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