Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics

Delmas, Marie ORCID: https://orcid.org/0000-0002-5895-1146, Rodriguez, Jean-Baptiste and Christol, Philippe 2014. Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics. Journal of Applied Physics 116 (11) , 113101. 10.1063/1.4895983

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Abstract

Dark current characteristics of 7 Monolayers (ML) InAs/ 4 ML GaSb SL pin photodiodes are simulated using ATLAS software. Using appropriate models and material parameters, we obtain good agreement between the simulated and the experimental dark current curves of photodiodes grown by molecular beam epitaxy. The n-type non-intentionally-doped (nid) SL samples exhibit a dependence of the lifetime with temperature following the T−12 law, signature of Shockley-Read-Hall (SRH) Generation-Recombination current. We also studied the dependence of the dark current with the absorber doping level. It appears that the absorber doping level must not exceed a value of 2 × 1015 cm−3, above this value the dark current is increasing with increased doping level. However for this doping value, a dark current as low as 5 × 10−9 A/cm2, at 50 mV reverse bias at 77 K can be obtained.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	AIP Publishing
ISSN:	0021-8979
Date of First Compliant Deposit:	9 February 2018
Date of Acceptance:	5 September 2014
Last Modified:	26 May 2023 17:28
URI:	https://orca.cardiff.ac.uk/id/eprint/108997

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