Delmas, Marie  ORCID: https://orcid.org/0000-0002-5895-1146, Rodriguez, Jean-Baptiste, Rossignol, Rémi, Licht, Abigail S., Giard, Edouard, Ribet-Mohamed, Isabelle and Christol, Philippe
2016.
Identification of a limiting mechanism in GaSb-rich superlattice midwave infrared detector.
Journal of Applied Physics
119
(17)
, 174503.
10.1063/1.4948670
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Abstract
GaSb-rich superlattice (SL) p-i-n photodiodes grown by molecular beam epitaxy were studied theoretically and experimentally in order to understand the poor dark current characteristics typically obtained. This behavior, independent of the SL-grown material quality, is usually attributed to the presence of defects due to Ga-related bonds, limiting the SL carrier lifetime. By analyzing the photoresponse spectra of reverse-biased photodiodes at 80 K, we have highlighted the presence of an electric field, breaking the minibands into localized Wannier-Stark states. Besides the influence of defects in such GaSb-rich SL structures, this electric field induces a strong tunneling current at low bias which can be the main limiting mechanism explaining the high dark current density of the GaSb-rich SL diode.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Publisher: | AIP Publishing |
| ISSN: | 0021-8979 |
| Date of First Compliant Deposit: | 9 February 2018 |
| Date of Acceptance: | 23 April 2016 |
| Last Modified: | 24 May 2023 06:18 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/108998 |
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