Identification of a limiting mechanism in GaSb-rich superlattice midwave infrared detector

Delmas, Marie ORCID: https://orcid.org/0000-0002-5895-1146, Rodriguez, Jean-Baptiste, Rossignol, Rémi, Licht, Abigail S., Giard, Edouard, Ribet-Mohamed, Isabelle and Christol, Philippe 2016. Identification of a limiting mechanism in GaSb-rich superlattice midwave infrared detector. Journal of Applied Physics 119 (17) , 174503. 10.1063/1.4948670

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Abstract

GaSb-rich superlattice (SL) p-i-n photodiodes grown by molecular beam epitaxy were studied theoretically and experimentally in order to understand the poor dark current characteristics typically obtained. This behavior, independent of the SL-grown material quality, is usually attributed to the presence of defects due to Ga-related bonds, limiting the SL carrier lifetime. By analyzing the photoresponse spectra of reverse-biased photodiodes at 80 K, we have highlighted the presence of an electric field, breaking the minibands into localized Wannier-Stark states. Besides the influence of defects in such GaSb-rich SL structures, this electric field induces a strong tunneling current at low bias which can be the main limiting mechanism explaining the high dark current density of the GaSb-rich SL diode.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	AIP Publishing
ISSN:	0021-8979
Date of First Compliant Deposit:	9 February 2018
Date of Acceptance:	23 April 2016
Last Modified:	24 May 2023 06:18
URI:	https://orca.cardiff.ac.uk/id/eprint/108998

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