Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction

Delmas, M. ORCID: https://orcid.org/0000-0002-5895-1146, Rodriguez, J. B., Taalat, R., Konczewicz, L., Desrat, W., Contreras, S., Giard, E., Ribet-Mohamed, I. and Christol, P. 2015. Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p–n junction. Infrared Physics and Technology 70 , pp. 76-80. 10.1016/j.infrared.2014.09.036

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Abstract

Midwave infrared (MWIR) InAs/GaSb superlattice (SL) photodiode with a dopant-free p–n junction was fabricated by molecular beam epitaxy on GaSb substrate. Depending on the thickness ratio between InAs and GaSb layers in the SL period, the residual background carriers of this adjustable material can be either n-type or p-type. Using this flexibility in residual doping of the SL material, the p–n junction of the device is made with different non-intentionally doped (nid) SL structures. The SL photodiode processed shows a cut-off wavelength at 4.65 μm at 77 K, residual carrier concentration equal to 1.75 × 1015 cm−3, dark current density as low as 2.8 × 10−8 A/cm2 at 50 mV reverse bias and R0A product as high as 2 × 106 Ω cm2. The results obtained demonstrate the possibility to fabricate a SL pin photodiode without intentional doping the pn junction.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	1350-4495
Date of First Compliant Deposit:	12 February 2018
Last Modified:	19 Nov 2024 07:30
URI:	https://orca.cardiff.ac.uk/id/eprint/108999

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