Design of InAs/GaSb superlattice infrared barrier detectors

Delmas, M. ORCID: https://orcid.org/0000-0002-5895-1146, Rossignol, R., Rodriguez, J.B. and Christol, P. 2017. Design of InAs/GaSb superlattice infrared barrier detectors. Superlattices and Microstructures 104 , pp. 402-414. 10.1016/j.spmi.2017.03.001

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Abstract

Design of InAs/GaSb type-II superlattice (T2SL) infrared barrier detectors is theoretically investigated. Each part of the barrier structures is studied in order to achieve optimal device operation at 150 K and 77 K, in the midwave and longwave infrared domain, respectively. Whatever the spectral domain, nBp structure with a p-type absorbing zone and an n-type contact layer is found to be the most favourable detector architecture allowing a reduction of the dark-current associated with generation-recombination processes. The nBp structures are then compared to pin photodiodes. The MWIR nBp detector with 5 μm cut-off wavelength can operate up to 120 K, resulting in an improvement of 20 K on the operating temperature compared to the pin device. The dark-current density of the LWIR nBp device at 77 K is expected to be as low as 3.5 × 10−4 A/cm2 at 50 mV reverse bias, more than one decade lower than the usual T2SL photodiode. This result, for a device having cut-off wavelength at 12 μm, is at the state of the art compared to the well-known MCT ‘rule 07’.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	Elsevier
ISSN:	0749-6036
Date of First Compliant Deposit:	12 February 2018
Date of Acceptance:	2 March 2017
Last Modified:	25 Nov 2024 23:30
URI:	https://orca.cardiff.ac.uk/id/eprint/109000

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