Delmas, M.  ORCID: https://orcid.org/0000-0002-5895-1146, Rossignol, R., Rodriguez, J.B. and Christol, P.
2017.
Design of InAs/GaSb superlattice infrared barrier detectors.
Superlattices and Microstructures
104
, pp. 402-414.
10.1016/j.spmi.2017.03.001
|
Preview |
PDF
- Accepted Post-Print Version
Available under License Creative Commons Attribution Non-commercial No Derivatives. Download (665kB) | Preview |
Abstract
Design of InAs/GaSb type-II superlattice (T2SL) infrared barrier detectors is theoretically investigated. Each part of the barrier structures is studied in order to achieve optimal device operation at 150 K and 77 K, in the midwave and longwave infrared domain, respectively. Whatever the spectral domain, nBp structure with a p-type absorbing zone and an n-type contact layer is found to be the most favourable detector architecture allowing a reduction of the dark-current associated with generation-recombination processes. The nBp structures are then compared to pin photodiodes. The MWIR nBp detector with 5 μm cut-off wavelength can operate up to 120 K, resulting in an improvement of 20 K on the operating temperature compared to the pin device. The dark-current density of the LWIR nBp device at 77 K is expected to be as low as 3.5 × 10−4 A/cm2 at 50 mV reverse bias, more than one decade lower than the usual T2SL photodiode. This result, for a device having cut-off wavelength at 12 μm, is at the state of the art compared to the well-known MCT ‘rule 07’.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Subjects: | Q Science > QC Physics |
| Publisher: | Elsevier |
| ISSN: | 0749-6036 |
| Date of First Compliant Deposit: | 12 February 2018 |
| Date of Acceptance: | 2 March 2017 |
| Last Modified: | 25 Nov 2024 23:30 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/109000 |
Citation Data
Cited 22 times in Scopus. View in Scopus. Powered By Scopus® Data
Actions (repository staff only)
 |
Edit Item |
Dimensions
Dimensions