High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications

Eblabla, A. ORCID: https://orcid.org/0000-0002-5991-892X, Li, X, Thayne, I., Wallis, D. J. ORCID: https://orcid.org/0000-0002-0475-7583, Guiney, I. and Elgaid, K. ORCID: https://orcid.org/0000-0003-3265-1097 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36 (9) , pp. 899-901. 10.1109/LED.2015.2460120

Full text not available from this repository.

Abstract

This letter reports the RF performance of a 0.3-μm gate length AlGaN/AlN/GaN HEMT realized on a 150-mm diameter low-resistivity (LR) (σ < 10 � · cm) silicon substrate. Short circuit current gain ( fT ) and maximum frequency of oscillation ( fMAX) of 55 and 121 GHz, respectively, were obtained. To our knowledge, these are the highest fT / fMAX values reported to date for GaN HEMTs on LR silicon substrates.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	0741-3106
Date of First Compliant Deposit:	12 February 2018
Date of Acceptance:	11 July 2015
Last Modified:	22 Jul 2023 17:05
URI:	https://orca.cardiff.ac.uk/id/eprint/109055

Citation Data

Cited 25 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item