Eblabla, A., Li, X, Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36 (9) , pp. 899-901. 10.1109/LED.2015.2460120 |
Official URL: http://dx.doi.org/10.1109/LED.2015.2460120
Abstract
This letter reports the RF performance of a 0.3-μm gate length AlGaN/AlN/GaN HEMT realized on a 150-mm diameter low-resistivity (LR) (σ < 10 � · cm) silicon substrate. Short circuit current gain ( fT ) and maximum frequency of oscillation ( fMAX) of 55 and 121 GHz, respectively, were obtained. To our knowledge, these are the highest fT / fMAX values reported to date for GaN HEMTs on LR silicon substrates.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
ISSN: | 0741-3106 |
Date of First Compliant Deposit: | 12 February 2018 |
Date of Acceptance: | 11 July 2015 |
Last Modified: | 23 Jul 2022 08:28 |
URI: | https://orca.cardiff.ac.uk/id/eprint/109055 |
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