Low-loss MMICs viable transmission media for GaN-on-Low resistivity silicon technology

Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Benakaprasad, Bhavana, Li, X., Wallis, D.J., Guiney, I. and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2017. Low-loss MMICs viable transmission media for GaN-on-Low resistivity silicon technology. IEEE Microwave and Wireless Components Letters 27 (1) , pp. 10-12. 10.1109/LMWC.2016.2629964

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Abstract

In this work a novel ultra-low loss transmission media for RF GaN-on-low-resistivity silicon (LR-Si) substrates (σ <; 40 Ω.cm) has been successfully demonstrated. The developed shielded-microstrip lines achieve comparable performance to those on semi-insulating (SI) GaAs substrates with transmission loss of 0.9 dB/mm for frequencies up to 67 GHz. Line performance was further enhanced by additional elevation of the shielded-microstrip lines using air-bridge technology above a 5 μm layer of benzocyclobutene (BCB) on shielded metalized ground planes. Transmission loss of 0.6 dB/mm for frequencies up to 67 GHz was obtained as a result of the extra elevation. Structure parameters were designed and optimized based on EM simulation for best performance. The work shows that the RF energy coupled into the substrate was eliminated, indicating the suitability of III-V-on-LR Si technology for millimeter-wave applications.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers
ISSN:	1531-1309
Date of First Compliant Deposit:	12 February 2018
Date of Acceptance:	8 September 2016
Last Modified:	18 Nov 2024 14:00
URI:	https://orca.cardiff.ac.uk/id/eprint/109059

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