High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications

Eblabla, A. ORCID: https://orcid.org/0000-0002-5991-892X, Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. ORCID: https://orcid.org/0000-0003-3265-1097 2018. High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters 28 (2) , pp. 99-101. 10.1109/LMWC.2018.2790705

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Abstract

Novel MMIC spiral inductors on GaN-on-low-resistivity silicon (LR-Si) substrates ( σ<40 Ω⋅cm ) are demonstrated with enhanced self-resonance frequency ( fSRF ) and Q -factor. The developed technology improves inductor performance by suppressing substrate coupling effects using air-bridge technology above benzocyclobutene dielectric as an interface layer on the lossy substrate. A 0.83-nH spiral inductor with peak Q -factor enhancement of 57% ( Q=22 at 24 GHz) and maximum fSRF of 59 GHz was achieved because of the extra 5- μm elevation in air. An accurate broad-band model for the fabricated inductors has been developed and verified for further performance analysis up to 40 GHz. The proposed inductors utilize cost-effective, reliable, and MMIC-compatible technology for the realization of high-performance RF GaN-on-LR Si MMIC circuits for millimeter-wave applications.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Engineering
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	1531-1309
Date of First Compliant Deposit:	12 February 2018
Date of Acceptance:	31 October 2017
Last Modified:	21 Nov 2024 11:30
URI:	https://orca.cardiff.ac.uk/id/eprint/109060

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