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High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications

Eblabla, A. ORCID:, Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. ORCID: 2018. High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters 28 (2) , pp. 99-101. 10.1109/LMWC.2018.2790705

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Novel MMIC spiral inductors on GaN-on-low-resistivity silicon (LR-Si) substrates ( σ<40 Ω⋅cm ) are demonstrated with enhanced self-resonance frequency ( fSRF ) and Q -factor. The developed technology improves inductor performance by suppressing substrate coupling effects using air-bridge technology above benzocyclobutene dielectric as an interface layer on the lossy substrate. A 0.83-nH spiral inductor with peak Q -factor enhancement of 57% ( Q=22 at 24 GHz) and maximum fSRF of 59 GHz was achieved because of the extra 5- μm elevation in air. An accurate broad-band model for the fabricated inductors has been developed and verified for further performance analysis up to 40 GHz. The proposed inductors utilize cost-effective, reliable, and MMIC-compatible technology for the realization of high-performance RF GaN-on-LR Si MMIC circuits for millimeter-wave applications.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1531-1309
Date of First Compliant Deposit: 12 February 2018
Date of Acceptance: 31 October 2017
Last Modified: 08 Nov 2023 08:46

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