Benakaprasad, B., Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Li, X., Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097, Wallis, D., Guiney, I. and Humphreys, C. 2017. Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (EuMC), 2016 46th European, London, UK, 4-6 Oct 2016. Microwave Conference (APMC) 2016 Asia-Pacific. IEEE, p. 413. 10.1109/EuMC.2016.7824367 |
Abstract
In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ <; 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold in addition to a layer of benzocyclobutene (BCB). A second circular patch is elevated in air using gold posts, making this design a stack configuration. The demonstrated antenna shows a measured resonance frequency in agreement with the modeling at 0.27 THz and a measured S11 as low as -18 dB was obtained. A directivity, gain and radiation efficiency of 8.3 dB, 3.4 dB, and 32% respectively was exhibited from the 3D EM model. To the authors' knowledge, this is the first demonstrated THz integrated microstrip stack antenna for TMIC (THz Monolithic Integrated Circuits) technology; the developed technology is suitable for high performance III-V material on low resistivity/high dielectric substrates.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Publication |
Status: | Published |
Schools: | Engineering |
Publisher: | IEEE |
ISBN: | 978-2-87487-043-9 |
ISSN: | 2165-4743 |
Last Modified: | 22 Nov 2022 09:22 |
URI: | https://orca.cardiff.ac.uk/id/eprint/109463 |
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