GaN-based HEMTs on low resistivity silicon technology for microwave applications

Eblabla, Abdalla ORCID: https://orcid.org/0000-0002-5991-892X, Li, Xiaojun, Wallis, D, Guiney, I and Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097 2016. GaN-based HEMTs on low resistivity silicon technology for microwave applications. Presented at: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell, UK, 12-13 Sept 2016.

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Item Type:	Conference or Workshop Item (Other)
Date Type:	Completion
Status:	Unpublished
Schools:	Engineering
Last Modified:	22 Nov 2022 09:23
URI:	https://orca.cardiff.ac.uk/id/eprint/109470

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