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X-Band GaN SPDT MMIC with over 25 watt linear power handling

Janssen, Jochem, Hilton, Keith P., Maclean, Jessica O., Wallis, David J. ORCID:, Powell, Jeff, Uren, Michael, Martin, Trevor, van Heijningen, Marc and van Vliet, Frank 2009. X-Band GaN SPDT MMIC with over 25 watt linear power handling. Presented at: European Microwave Integrated Circuit Conference, 2008, Amsterdam, The Netherlands, 27-28 October 2009. 2008 European Microwave Integrated Circuit Conference. IEEE, 10.1109/EMICC.2008.4772261

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Single Pole Double Throw (SPDT) switches are becoming more and more key components in phased-array radar transmit/receive modules. An SPDT switch must be able to handle the output power of a high power amplifier and must provide enough isolation to protect the low noise amplifier in the receive chain when the T/R module is transmitting. Therefore Gallium Nitride technology seems to become a key technology for high power SPDT switch design. The technology shows good performance on microwave frequencies and is able to handle high power. An X-band SPDT switch, with a linear power handling of over 25 W, has been designed, measured and evaluated. The circuit is designed in the coplanar waveguide AlGaN/GaN technology established at QinetiQ.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: IEEE
ISBN: 9782874870071
Last Modified: 23 Oct 2022 13:02

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