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Control of Short-Channel Effects in GaN/AlGaN HFETs

Uren, M, Hayes, D, Balmer, R, Wallis, D ORCID:, Hilton, K, Maclean, J, Martin, T, Roff, C, McGovern, P, Benedikt, J ORCID: and Tasker, P ORCID: 2006. Control of Short-Channel Effects in GaN/AlGaN HFETs. Presented at: 1st European Microwave Integrated Circuits Conference, Manchester, UK, 10-13 Sept 2006. 2006 European Microwave Integrated Circuits Conference. IEEE, p. 65. 10.1109/EMICC.2006.282751

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GaN/AlGaN HEMTs can suffer from short channel effects as a result of insufficient buffer doping. The paper show that controlled iron doping of the GaN buffer during MOVPE growth can suppress all short-channel effects in 0.25mum gate length devices. The authors show that optimised iron doping has no effect on the RF output power or on the knee walkout (current-slump), but significantly improves the power added efficiency

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: IEEE
ISBN: 2960055187
Last Modified: 22 Nov 2022 09:23

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