Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Yang, L, Asenov, A, Watling, J.R, Boriçi, M, Barker, J.R, Roy, S, Elgaid, Khaled ORCID: https://orcid.org/0000-0003-3265-1097, Thayne, I and Hackbarth, T 2004. Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability 44 (7) , pp. 1101-1107. 10.1016/j.microrel.2004.04.003

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Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Schools > Engineering
Publisher:	Elsevier
ISSN:	0026-2714
Last Modified:	23 Oct 2022 13:03
URI:	https://orca.cardiff.ac.uk/id/eprint/109544

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