Optoelectronic properties of GaAs nanowire photodetector

Wang, H., Parkinson, P., Tian, J., Saxena, D., Mokkapati, Sudha ORCID: https://orcid.org/0000-0003-3260-6560, Gao, Q., Prasai, P., Fu, L., Karouta, F., Tan, H. H. and Jagadish, C. 2012. Optoelectronic properties of GaAs nanowire photodetector. Presented at: COMMAD 2012, Melbourne, Australia, 12-14 December 2012. COMMAD 2012 Conference on Optoelectronic and Microelectronic Materials & Devices. IEEE, p. 139. 10.1109/COMMAD.2012.6472399

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Abstract

A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

Item Type:	Conference or Workshop Item (Paper)
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISSN:	1097-2137
Last Modified:	23 Oct 2022 13:05
URI:	https://orca.cardiff.ac.uk/id/eprint/109623

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