Wang, H., Parkinson, P., Tian, J., Saxena, D., Mokkapati, Sudha ORCID: https://orcid.org/0000-0003-3260-6560, Gao, Q., Prasai, P., Fu, L., Karouta, F., Tan, H. H. and Jagadish, C. 2012. Optoelectronic properties of GaAs nanowire photodetector. Presented at: COMMAD 2012, Melbourne, Australia, 12-14 December 2012. COMMAD 2012 Conference on Optoelectronic and Microelectronic Materials & Devices. IEEE, p. 139. 10.1109/COMMAD.2012.6472399 |
Official URL: http://dx.doi.org/10.1109/COMMAD.2012.6472399
Abstract
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.
Item Type: | Conference or Workshop Item (Paper) |
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Status: | Published |
Schools: | Physics and Astronomy |
Subjects: | Q Science > QC Physics |
Publisher: | IEEE |
ISSN: | 1097-2137 |
Last Modified: | 23 Oct 2022 13:05 |
URI: | https://orca.cardiff.ac.uk/id/eprint/109623 |
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