Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

Fu, L., Lu, H. F., Mokkapati, Sudha ORCID: https://orcid.org/0000-0003-3260-6560, Jolley, G., Tan, H. H. and Jagadish, C. 2011. Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells. Presented at: IEEE Photonic Society 24th Annual Meeting, Arlington, VA, USA, 9-13 October 2011. Photonics Conference (PHO). IEEE, p. 387. 10.1109/PHO.2011.6110590

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Abstract

We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.

Item Type:	Conference or Workshop Item (Paper)
Status:	Published
Schools:	Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Photovoltaic cells, Quantum dots, Plasmons, Gallium arsenide, Nanoparticles, Charge carrier processes, Physics
Publisher:	IEEE
ISSN:	1092-8081
Last Modified:	23 Oct 2022 13:07
URI:	https://orca.cardiff.ac.uk/id/eprint/109732

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