Integration of quantum dot optoelectronic devices using selective-area MOCVD

Mokkapati, Sudha ORCID: https://orcid.org/0000-0003-3260-6560, Tan, H.H. and Jagadish, C. 2007. Integration of quantum dot optoelectronic devices using selective-area MOCVD. Presented at: LEOS 2006 - 19th Annual Meeting of the IEEE, Montreal, QE, Canada, 29 Oct -2 Nov 2006. Lasers Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE. IEEE, pp. 110-111. 10.1109/LEOS.2006.278880

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Abstract

We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to grow the active region with quantum dots emitting at different wavelengths for fabrication of the integrated devices.

Item Type:	Conference or Workshop Item (Paper)
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Publisher:	IEEE
ISSN:	1092-8081
Last Modified:	23 Oct 2022 13:11
URI:	https://orca.cardiff.ac.uk/id/eprint/109897

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