Wan, Yating, Norman, Justin, Li, Qiang  ORCID: https://orcid.org/0000-0002-5257-7704, Kennedy, M. J., Liang, Di, Zhang, Chong, Huang, Duanni, Zhang, Zeyu, Liu, Alan Y., Torres, Alfredo, Jung, Daehwan, Gossard, Arthur C., Hu, Evelyn L., Lau, Kei May and Bowers, John E.
2017.
1.3 μm submilliamp threshold quantum dot micro-lasers on Si.
Optica
4
(8)
, pp. 940-944.
10.1364/OPTICA.4.000940
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Abstract
As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in a cost-effective way for volume manufacturability. Currently, direct heteroepitaxial growth of III–V laser structures on Si using quantum dots as the active region is a vibrant field of research, with the potential to demonstrate low-cost, high-yield, long-lifetime, and high-temperature devices. Ongoing work is being conducted to reduce the power consumption, maximize the operating temperature, and switch from miscut Si substrates toward the so-called exact (001) Si substrates that are standard in microelectronics fabrication. Here, we demonstrate record-small electrically pumped micro-lasers epitaxially grown on industry standard (001) silicon substrates. Continuous-wave lasing up to 100°C was demonstrated at 1.3 μm communication wavelength. A submilliamp threshold of 0.6 mA was achieved for a micro-laser with a radius of 5 μm. The thresholds and footprints are orders of magnitude smaller than those previously reported lasers epitaxially grown on Si.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | Optical Society of America |
| ISSN: | 2334-2536 |
| Date of First Compliant Deposit: | 22 June 2018 |
| Date of Acceptance: | 7 July 2017 |
| Last Modified: | 05 May 2023 00:36 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/111662 |
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