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1.3  μm submilliamp threshold quantum dot micro-lasers on Si

Wan, Yating, Norman, Justin, Li, Qiang, Kennedy, M. J., Liang, Di, Zhang, Chong, Huang, Duanni, Zhang, Zeyu, Liu, Alan Y., Torres, Alfredo, Jung, Daehwan, Gossard, Arthur C., Hu, Evelyn L., Lau, Kei May and Bowers, John E. 2017. 1.3  μm submilliamp threshold quantum dot micro-lasers on Si. Optica 4 (8) , pp. 940-944. 10.1364/OPTICA.4.000940

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As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in a cost-effective way for volume manufacturability. Currently, direct heteroepitaxial growth of III–V laser structures on Si using quantum dots as the active region is a vibrant field of research, with the potential to demonstrate low-cost, high-yield, long-lifetime, and high-temperature devices. Ongoing work is being conducted to reduce the power consumption, maximize the operating temperature, and switch from miscut Si substrates toward the so-called exact (001) Si substrates that are standard in microelectronics fabrication. Here, we demonstrate record-small electrically pumped micro-lasers epitaxially grown on industry standard (001) silicon substrates. Continuous-wave lasing up to 100°C was demonstrated at 1.3 μm communication wavelength. A submilliamp threshold of 0.6 mA was achieved for a micro-laser with a radius of 5 μm. The thresholds and footprints are orders of magnitude smaller than those previously reported lasers epitaxially grown on Si.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Optical Society of America
ISSN: 2334-2536
Date of First Compliant Deposit: 22 June 2018
Date of Acceptance: 7 July 2017
Last Modified: 22 Jun 2018 16:00

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