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1.3  μm submilliamp threshold quantum dot micro-lasers on Si

Wan, Yating, Norman, Justin, Li, Qiang ORCID:, Kennedy, M. J., Liang, Di, Zhang, Chong, Huang, Duanni, Zhang, Zeyu, Liu, Alan Y., Torres, Alfredo, Jung, Daehwan, Gossard, Arthur C., Hu, Evelyn L., Lau, Kei May and Bowers, John E. 2017. 1.3  μm submilliamp threshold quantum dot micro-lasers on Si. Optica 4 (8) , pp. 940-944. 10.1364/OPTICA.4.000940

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As a promising integration platform, silicon photonics need on-chip laser sources that dramatically improve capability, while trimming size and power dissipation in a cost-effective way for volume manufacturability. Currently, direct heteroepitaxial growth of III–V laser structures on Si using quantum dots as the active region is a vibrant field of research, with the potential to demonstrate low-cost, high-yield, long-lifetime, and high-temperature devices. Ongoing work is being conducted to reduce the power consumption, maximize the operating temperature, and switch from miscut Si substrates toward the so-called exact (001) Si substrates that are standard in microelectronics fabrication. Here, we demonstrate record-small electrically pumped micro-lasers epitaxially grown on industry standard (001) silicon substrates. Continuous-wave lasing up to 100°C was demonstrated at 1.3 μm communication wavelength. A submilliamp threshold of 0.6 mA was achieved for a micro-laser with a radius of 5 μm. The thresholds and footprints are orders of magnitude smaller than those previously reported lasers epitaxially grown on Si.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Optical Society of America
ISSN: 2334-2536
Date of First Compliant Deposit: 22 June 2018
Date of Acceptance: 7 July 2017
Last Modified: 05 May 2023 00:36

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