Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May 2017. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics. Progress in Crystal Growth and Characterization of Materials 63 (4) , pp. 105-120. 10.1016/j.pcrysgrow.2017.10.001

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Abstract

Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Elsevier: 24 months
ISSN:	0960-8974
Date of First Compliant Deposit:	29 May 2018
Date of Acceptance:	14 November 2017
Last Modified:	29 Nov 2024 07:30
URI:	https://orca.cardiff.ac.uk/id/eprint/111696

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