Li, Qiang  ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May
2017.
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics.
Progress in Crystal Growth and Characterization of Materials
63
(4)
, pp. 105-120.
10.1016/j.pcrysgrow.2017.10.001
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Abstract
Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | Elsevier: 24 months |
| ISSN: | 0960-8974 |
| Date of First Compliant Deposit: | 29 May 2018 |
| Date of Acceptance: | 14 November 2017 |
| Last Modified: | 29 Nov 2024 07:30 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/111696 |
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