Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Li, Qiang and Lau, Kei May 2017. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics. Progress in Crystal Growth and Characterization of Materials 63 (4) , pp. 105-120. 10.1016/j.pcrysgrow.2017.10.001

[thumbnail of pagination_JPCGCM_441.pdf]
Preview
PDF - Accepted Post-Print Version
Available under License Creative Commons Attribution Non-commercial No Derivatives.

Download (5MB) | Preview

Abstract

Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Elsevier: 24 months
ISSN: 0960-8974
Date of First Compliant Deposit: 29 May 2018
Date of Acceptance: 14 November 2017
Last Modified: 29 May 2018 11:43
URI: https://orca.cardiff.ac.uk/id/eprint/111696

Citation Data

Cited 82 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item

Downloads

Downloads per month over past year

View more statistics