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Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Li, Qiang ORCID: and Lau, Kei May 2017. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics. Progress in Crystal Growth and Characterization of Materials 63 (4) , pp. 105-120. 10.1016/j.pcrysgrow.2017.10.001

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Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Elsevier: 24 months
ISSN: 0960-8974
Date of First Compliant Deposit: 29 May 2018
Date of Acceptance: 14 November 2017
Last Modified: 07 Nov 2023 01:53

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