Growth of ultra-high mobility In0.52Al0.48As/InxGa1−xAs (x ≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition

Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Tang, Chak Wah and Lau, Kei May 2014. Growth of ultra-high mobility In0.52Al0.48As/InxGa1−xAs (x ≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition. Applied Physics Express 7 (4) , 045502. 10.7567/APEX.7.045502

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Abstract

InGaAs quantum wells (QWs) cladded by InAlAs barriers were grown on Si by metalorganic chemical vapor deposition. InP/GaAs/Si buffer templates were first prepared using a two-step growth method. We were able to significantly reduce the dislocation density in the upper InP buffer and obtain smooth surface morphology by fine-tuning the growth parameters and inserting an InGaAs interlayer in the InP buffer. On these InP/GaAs/Si compliant substrates, we investigated InGaAs QWs with various well/barrier parameters and Si-delta doping. We obtained two-dimensional electron gas mobilities over 10,000 cm2 V−1 s−1 at 300 K and above 39,000 cm2 V−1 s−1 at 77 K on Si substrates.

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IOP Publishing
ISSN:	1882-0778
Date of First Compliant Deposit:	25 May 2018
Date of Acceptance:	25 February 2014
Last Modified:	23 Oct 2022 13:48
URI:	https://orca.cardiff.ac.uk/id/eprint/111783

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