InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands

Han, Yu, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Ng, Kar Wei, Zhu, Si and Lau, Kei May 2018. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands. Nanotechnology 29 (22) , 225601. 10.1088/1361-6528/aab53b

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Abstract

We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal–organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III–V nano-light emitters on mainstream (001) Si substrates.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IOP Publishing: Hybrid Open Access
ISSN:	0957-4484
Date of First Compliant Deposit:	29 May 2018
Date of Acceptance:	8 March 2018
Last Modified:	15 Nov 2024 11:45
URI:	https://orca.cardiff.ac.uk/id/eprint/111814

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