Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon

Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Jiang, Huaxing and Lau, Kei May 2016. Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon. Journal of Crystal Growth 454 , pp. 19-24. 10.1016/j.jcrysgro.2016.08.051

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Abstract

We report three dimensional (3D) disk-shaped GaAs crystals on V-groove patterned (001) Si substrates by metalorganic chemical vapor deposition. Planar GaAs nanowires with triangular cross-sections were grown inside Si V-grooves by nano-scale selective heteroepitaxy. These nanowires were then partially confined in micro-sized SiO2 cavities and coalesced into uniform arrays of 3D crystals. Scanning electron microscope and atomic force microscopy inspection showed the absence of antiphase-domains and smooth top surface morphology. Superior structural and optical properties over GaAs thin films on planar Si were also demonstrated. More remarkably, by growing the 3D crystals on V-grooved Si, we were able to overcome the residual tensile stress induced by the thermal mismatch between GaAs and Si. Strain-free GaAs was uncovered in the crystals with a dimension of 3×3 µm2.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Elsevier
ISSN:	0022-0248
Date of First Compliant Deposit:	31 May 2018
Date of Acceptance:	26 August 2016
Last Modified:	19 Nov 2024 20:15
URI:	https://orca.cardiff.ac.uk/id/eprint/111844

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