Li, Qiang  ORCID: https://orcid.org/0000-0002-5257-7704, Jiang, Huaxing and Lau, Kei May
2016.
Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon.
Journal of Crystal Growth
454
, pp. 19-24.
10.1016/j.jcrysgro.2016.08.051
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Abstract
We report three dimensional (3D) disk-shaped GaAs crystals on V-groove patterned (001) Si substrates by metalorganic chemical vapor deposition. Planar GaAs nanowires with triangular cross-sections were grown inside Si V-grooves by nano-scale selective heteroepitaxy. These nanowires were then partially confined in micro-sized SiO2 cavities and coalesced into uniform arrays of 3D crystals. Scanning electron microscope and atomic force microscopy inspection showed the absence of antiphase-domains and smooth top surface morphology. Superior structural and optical properties over GaAs thin films on planar Si were also demonstrated. More remarkably, by growing the 3D crystals on V-grooved Si, we were able to overcome the residual tensile stress induced by the thermal mismatch between GaAs and Si. Strain-free GaAs was uncovered in the crystals with a dimension of 3×3 µm2.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy |
| Publisher: | Elsevier |
| ISSN: | 0022-0248 |
| Date of First Compliant Deposit: | 31 May 2018 |
| Date of Acceptance: | 26 August 2016 |
| Last Modified: | 19 Nov 2024 20:15 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/111844 |
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