Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon

Li, Qiang ORCID:, Jiang, Huaxing and Lau, Kei May 2016. Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon. Journal of Crystal Growth 454 , pp. 19-24. 10.1016/j.jcrysgro.2016.08.051

[thumbnail of 3D GaAs crystals 0806 - submit.pdf]
PDF - Accepted Post-Print Version
Download (815kB) | Preview


We report three dimensional (3D) disk-shaped GaAs crystals on V-groove patterned (001) Si substrates by metalorganic chemical vapor deposition. Planar GaAs nanowires with triangular cross-sections were grown inside Si V-grooves by nano-scale selective heteroepitaxy. These nanowires were then partially confined in micro-sized SiO2 cavities and coalesced into uniform arrays of 3D crystals. Scanning electron microscope and atomic force microscopy inspection showed the absence of antiphase-domains and smooth top surface morphology. Superior structural and optical properties over GaAs thin films on planar Si were also demonstrated. More remarkably, by growing the 3D crystals on V-grooved Si, we were able to overcome the residual tensile stress induced by the thermal mismatch between GaAs and Si. Strain-free GaAs was uncovered in the crystals with a dimension of 3×3 µm2.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Elsevier
ISSN: 0022-0248
Date of First Compliant Deposit: 31 May 2018
Date of Acceptance: 26 August 2016
Last Modified: 10 Nov 2023 09:03

Citation Data

Cited 6 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item


Downloads per month over past year

View more statistics