Telecom-wavelength bottom-up nanobeam lasers on silicon-on-insulator

Kim, Hyunseok, Lee, Wook-Jae ORCID: https://orcid.org/0000-0001-8430-4797, Farrell, Alan C., Balgarkashi, Akshay ORCID: https://orcid.org/0000-0003-0504-5542 and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2017. Telecom-wavelength bottom-up nanobeam lasers on silicon-on-insulator. Nano Letters 17 (9) , pp. 5244-5250. 10.1021/acs.nanolett.7b01360

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Abstract

Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy Engineering
Publisher:	American Chemical Society
ISSN:	1530-6984
Date of First Compliant Deposit:	6 August 2018
Last Modified:	19 Nov 2024 15:30
URI:	https://orca.cardiff.ac.uk/id/eprint/112315

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