Kim, Hyunseok, Lee, Wook-Jae  ORCID: https://orcid.org/0000-0001-8430-4797, Farrell, Alan C., Balgarkashi, Akshay ORCID: https://orcid.org/0000-0003-0504-5542 and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481
2017.
Telecom-wavelength bottom-up nanobeam lasers on silicon-on-insulator.
Nano Letters
17
(9)
, pp. 5244-5250.
10.1021/acs.nanolett.7b01360
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Abstract
Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.
| Item Type: | Article |
|---|---|
| Date Type: | Publication |
| Status: | Published |
| Schools: | Schools > Physics and Astronomy Schools > Engineering |
| Publisher: | American Chemical Society |
| ISSN: | 1530-6984 |
| Date of First Compliant Deposit: | 6 August 2018 |
| Last Modified: | 19 Nov 2024 15:30 |
| URI: | https://orca.cardiff.ac.uk/id/eprint/112315 |
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