Role of device structure on the performance of quantum dot lasers

Naidu, Deepal, Mexis, Meletios, Sobiesierski, Angela, Smowton, Peter Michael ORCID: https://orcid.org/0000-0002-9105-4842, Summers, H .D., Mowbray, D. J., Liu, H. Y. and Hopkinson, M. 2007. Role of device structure on the performance of quantum dot lasers. Presented at: LEOS 2007: 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2007, 21-25 October 2007. LEOS 2007. The 20th Annual Meeting of the IEEE. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2. IEEE, pp. 435-436. 10.1109/LEOS.2007.4382465

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Abstract

Measurements of the confinement factor, internal loss, diffusion length and sidewall recombination, using special test structures and a new measurement method, explain the large differences in threshold current density of broad area and ridge lasers of different width.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Schools > Physics and Astronomy
Subjects:	Q Science > QC Physics
Uncontrolled Keywords:	Quantum dot lasers
Publisher:	IEEE
ISBN:	9781424409259
Last Modified:	18 Oct 2022 12:47
URI:	https://orca.cardiff.ac.uk/id/eprint/11262

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