GaSb on GaAs interfacial misfit solar cells

Nelson, George T, Juang, Bor-Chau, Slocum, Michael, Bittner, Zachary, Lagumavarapu, Ramesh B, Huffaker, Diana ORCID: https://orcid.org/0000-0001-5946-4481 and Hubbard, Seth 2018. GaSb on GaAs interfacial misfit solar cells. Presented at: IEEE 44th Photovoltaic Specialist Conference (PVSC), Washington DC, USA, 25-30 Jun 2017. IEEE 44th Photovoltaic Specialist Conference (PVSC). IEEE Xplore, 10.1109/PVSC.2017.8366539

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Abstract

The GaAs/GaSb interface misfit design can achieve comparable efficiency to conventional inverted metamorphic multijunction cells at up to 30% cost reduction. In this pre-liminary work, GaSb single junctions were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare and fine tune the interfacial misfit growth process. Current vs voltage results show that the best homo-epitaxial cell achieved 5.2% under 35-sun concentration. TEM did not reveal any threading dislocations in the hetero-epitaxial cells, however, device results indicated higher non-radiative recombination than expected, likely due to unpassivated surface states. Improvements to cell processing will be explored and more characterization is planned to determine the cause of degraded hetero-epitaxial cell performance.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IEEE Xplore
Date of First Compliant Deposit:	3 July 2018
Date of Acceptance:	28 May 2018
Last Modified:	23 Oct 2022 14:10
URI:	https://orca.cardiff.ac.uk/id/eprint/112953

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