Kesaria, M. ORCID: https://orcid.org/0000-0003-1664-0806, de la Mare, M. and Krier, A. 2016. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics 49 (43) , 435107. 10.1088/0022-3727/49/43/435107 |
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Abstract
Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in situ by reflection high energy electron diffraction and ex situ by high resolution x-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron–heavy hole (e1–hh1) and electron–light hole (e1–lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~4.20 µm and peak detectivity D * = 1.25 × 109 cm Hz1/2 W−1.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | IOP Publishing |
ISSN: | 0022-3727 |
Date of First Compliant Deposit: | 9 October 2018 |
Date of Acceptance: | 5 September 2016 |
Last Modified: | 06 May 2023 06:00 |
URI: | https://orca.cardiff.ac.uk/id/eprint/115530 |
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