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Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

Kesaria, M. ORCID:, de la Mare, M. and Krier, A. 2016. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE. Journal of Physics D: Applied Physics 49 (43) , 435107. 10.1088/0022-3727/49/43/435107

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Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in situ by reflection high energy electron diffraction and ex situ by high resolution x-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron–heavy hole (e1–hh1) and electron–light hole (e1–lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~4.20 µm and peak detectivity D *  =  1.25  ×  109 cm Hz1/2 W−1.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: IOP Publishing
ISSN: 0022-3727
Date of First Compliant Deposit: 9 October 2018
Date of Acceptance: 5 September 2016
Last Modified: 24 Oct 2022 07:39

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