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Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

Krier, A., Yin, M., Marshall, A. R. J., Kesaria, M. ORCID:, Krier, S. E., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. and Scholes, A. 2015. Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics and Technology 73 , pp. 126-129. 10.1016/j.infrared.2015.09.011

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We demonstrate the first low bandgap thermophotovoltaic (TPV) arrays capable of operating with heat sources at temperatures as low as 345 °C, which is the lowest ever reported. The individual array elements are based on narrow band gap InAs/InAs0.61Sb0.13P0.26 photodiode structures. External power conversion efficiency was measured to be ∼3% from a single element at room temperature, using a black body at 950 °C. Both 25-element and 65-element arrays were fabricated and exhibited a TPV response at different source temperatures in the range 345–950 °C suitable for electricity generation from waste heat and other applications.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Elsevier
ISSN: 1350-4495
Last Modified: 24 Oct 2022 07:39

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