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In(AsN) mid-infrared emission enhanced by rapid thermal annealing

Kesaria, M. ORCID:, Birindelli, S., Velichko, A. V., Zhuang, Q. D., Patane, A., Capizzi, M. and Krier, A. 2015. In(AsN) mid-infrared emission enhanced by rapid thermal annealing. Infrared Physics and Technology 68 , pp. 138-142. 10.1016/j.infrared.2014.11.016

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We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4 K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley–Read–Hall recombination originating from elimination of point defects. For annealing temperatures up to 500 °C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
ISSN: 1350-4495
Last Modified: 24 Oct 2022 07:39

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