Room-temperature InGaAs nanowire array band-edge lasers on patterned silicon-on-insulator platforms

Kim, Hyunseok, Lee, Wook-Jae ORCID: https://orcid.org/0000-0001-8430-4797, Chang, Ting-Yuan and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2018. Room-temperature InGaAs nanowire array band-edge lasers on patterned silicon-on-insulator platforms. physica status solidi (RRL) - Rapid Research Letters , -. 10.1002/pssr.201800489

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Abstract

Integration of ultracompact light sources on silicon platforms is regarded as a crucial requirement for various nanophotonic applications. In this work, InGaAs/InP core/shell nanowire array photonic crystal lasers are demon- strated on silicon-on-insulator substrates by selective-area epitaxy. 9  9 square-lattice nanowires forming photonic crystal cavities with a footprint of only 3.0  3.0 μm 2 , and a high Q factor of 23 000 are achieved by forming these nanowires on two-dimensional silicon gratings. Room-temperature lasing is observed from a fundamental band-edge mode at 1290 nm, which is the O-band of the telecommunication wavelength. Optimized growth templates and effective in-situ passivation of InGaAs nanowires enable the nanowire array to lase at a low threshold of 200 μJcm 2 , without any signature of heating or degradation above the threshold. These results represent a meaningful step toward ultracompact and monolithic III–V lasers on silicon photonic platforms

Item Type:	Article
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy Engineering
Publisher:	Wiley-VCH Verlag
ISSN:	1862-6254
Date of First Compliant Deposit:	21 December 2018
Date of Acceptance:	27 November 2018
Last Modified:	27 Nov 2024 04:15
URI:	https://orca.cardiff.ac.uk/id/eprint/117885

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