Electron and proton radiation effects on band structure and carrier dynamics in MBE and MOCVD grown III-V test structures

Hudson, Andrew, Scofield, Adam, Lotshaw, William, Hubbard, Seth, Slocum, Michael, Liang, Baolai, Debnath, Mukul C., Juang, Bor-Chau and Huffaker, Diana L. ORCID: https://orcid.org/0000-0001-5946-4481 2018. Electron and proton radiation effects on band structure and carrier dynamics in MBE and MOCVD grown III-V test structures. Presented at: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Waikoloa Village, HI, USA, 10-15 June 2018. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, p. 3265. 10.1109/PVSC.2018.8547607

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Abstract

As part of a continuing study on radiation effects in photovoltaic materials, we exposed a series of AlGaAs/GaAs double heterostructures grown by molecular beam epitaxy and metalorganic chemical vapor deposition to electron and proton radiation. The active regions of the test articles were doped either unintentionally, p -type or n -type. Steady state and time resolved photoluminescence spectroscopy were used to characterize changes to the band structure and carrier dynamics. The effect of electron radiation on low temperature photoluminescence spectra and on room temperature carrier lifetime varied with dopant type and density. Steady-state photoluminescence reveals distinct effects from electron and proton exposures.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Published Online
Status:	Published
Schools:	Physics and Astronomy
Publisher:	IEEE
Date of First Compliant Deposit:	25 January 2019
Date of Acceptance:	29 November 2018
Last Modified:	25 Oct 2022 13:05
URI:	https://orca.cardiff.ac.uk/id/eprint/118842

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